MJ11033 ,POWER TRANSISTOR(50A,60-120V,300W)ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJ11033G , High−Current Complementary Silicon Power Transistors
MJ13333 ,20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTSMAXIMUM RATINGSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJ13335 , isc Silicon NPN Power Transistor
MJ14001 ,60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJ14002 ,60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS3V, VOLTAGE (VOLTS) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAINCE FEV, VOLTAGE (VOLTS ..
MM74C901N ,Hex Inverting TTL Buffer . Hex Non-Inverting TTL BufferMM74C901 • MM74C902 Hex Inverting TTL Buffer • Hex Non-Inverting TTL BufferOctober 1987Revised Janu ..
MM74C902M ,Hex Non-Inverting TTL BufferElectrical Characteristics” providesconditions for actual device operation.(Soldering, 10 seconds) ..
MM74C902N ,Hex Non-Inverting TTL BufferMM74C902 Hex Non-Inverting TTL BufferOctober 1987Revised January 2004MM74C902Hex Non-Inverting TTL ..
MM74C905N ,3 V to 15 V, 12-bit successive approximation registerMM74C905 12-Bit Successive Approximation RegisterOctober 1987Revised July 2003MM74C90512-Bit Succes ..
MM74C906M ,Hex Open Drain N-Channel BuffersMM74C906 Hex Open Drain N-Channel BuffersOctober 1987Revised January 2004MM74C906Hex Open Drain N-C ..
MM74C906N ,Hex Open Drain N-Channel BuffersFeaturesThe MM74C906 buffer employs monolithic CMOS technol-
MJ11028-MJ11033
POWER TRANSISTOR(50A,60-120V,300W)
(NPN) MJ11028, MJ11030,
MJ11032 (PNP) MJ11029,
MJ11033
High-Current
Complementary Silicon
Power Transistors.. for use as output devices in complementary general purpose
amplifier applications. High DC Current Gain −
hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc Curves to 100 A (Pulsed) Diode Protection to Rated IC Monolithic Construction with Built−In Base−Emitter Shunt
Resistor Junction Temperature to +200�C
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
THERMAL CHARACTERISTICSÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected. Pulse Test: Pulse Width = 5 �s, Duty Cycle ≤ 10%.
