MJ11016 ,Leaded Power Transistor DarlingtonELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.)CCharacteristics Symbol Min Max UnitOF ..
MJ11017 ,POWER TRANSISTORS(15A,150-250V,175W)Order this document**by MJ11017/DSEMICONDUCTOR TECHNICAL DATA* **" * ** **!** **. . . designed for ..
MJ11020 , NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)
MJ11028 ,POWER TRANSISTOR(50A,60-120V,300W)2(NPN) MJ11028, MJ11030, MJ11032 (PNP) MJ11029, MJ11033100There are two limitations on the power−ha ..
MJ11032 ,POWER TRANSISTOR(50A,60-120V,300W)
MJ11033 ,POWER TRANSISTOR(50A,60-120V,300W)ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MM74C76N ,Dual J-K Flip-Flops with Clear and PresetApplicationsClear or preset is independent of the clock and is accom-• Automotiveplished by a low l ..
MM74C85N ,4-Bit Magnitude ComparatorFeaturesThe MM74C85 is a four-bit magnitude comparator which
MJ11015-MJ11016
Leaded Power Transistor Darlington
High-Current Complementary
Silicon T ransistors.. for use as output devices in complementary general purpose
amplifier applications. High DC Current Gain —
hFE = 1000 (Min) @ IC – 20 Adc Monolithic Construction with Built–in Base Emitter Shunt
Resistor Junction Temperature to +200�C
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Figure 1. Darlington Circuit SchematicBASE
EMITTER
COLLECTOR
PNP
MJ11015
BASE
EMITTER
COLLECTOR
NPN
MJ11012
MJ11016
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
*ON Semiconductor Preferred Device
