MJ10009 ,SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODEOrder this document**by MJ10009/DSEMICONDUCTOR TECHNICAL DATA* ** * Motorola Preferred Device* ** ..
MJ10009 ,SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
MJ10012 ,NPN SILICON POWER DARLINGTON TRANSISTORSTHERMAL CHARACTERISTICSÎÎÎÎÎÎCharacteristic Symbol Max UnitÎÎÎÎÎCASE 340D–01Thermal Resistance, Jun ..
MJ10014 , POWER TRANSISTORS(10A,550-600V,175W)
MJ10015 ,POWER TRANSISTORS(50A,400-500V,250W)Order this document**by MJ10015/DSEMICONDUCTOR TECHNICAL DATA **$**% **"! *"(*$ **$**!*&"!50 AMPERE ..
MJ10015 ,POWER TRANSISTORS(50A,400-500V,250W)
MM74C32N ,Quad 2-Input OR GateMM74C32 Quad 2-Input OR GateOctober 1987Revised January 2004MM74C32Quad 2-Input OR Gate
MM74C373N ,3-STATE Octal D-Type LatchFeaturesThe MM74C373 and MM74C374 are integrated, comple-
MJ10009
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
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The MJ10009 Darlington transistor is designed for high–voltage, high–speed,
power switching in Inductive circuits where fall time is critical. It is particularly suited
for line operated switchmode applications such as: Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits
Fast Turn–Off Times
1.6 μs (max) Inductive Crossover Time – 10 A, 100C
3.5 μs (max) Inductive Storage Time – 10 A, 100C
Operating Temperature Range –65 to +200C
100 C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
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(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limitcurves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
*Motorola Preferred Device
