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MIG150Q101HTOSHIBAN/a5avaiIntelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications


MIG150Q101H ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter power & control circuits (IGBT drive units, protection units f ..
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MM3Z4V7 ,Zener Voltage Regulator Diode2MM3Z2V4T1 SERIES
MM3Z4V7ST1 ,Zener Voltage Regulator Diode3MM3Z2V4T1 SERIESTYPICAL CHARACTERISTICS1000 1000T = 25°CJI = 0.1 IZ(AC) Z(DC)f = 1 kHz100 100I = 1 ..
MM3Z4V7ST1G ,Zener Voltage Regulator DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA for all typ ..
MM3Z4V7T1 ,Zener Voltage Regulator DiodeFeatures: 1 2Cathode Anode• Standard Zener Breakdown Voltage Range − 2.4 V to 75 V• Steady State Po ..
MM3Z4V7T1G ,Zener Voltage Regulator DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA for all typ ..
MM3Z4V7T1G ,Zener Voltage Regulator DiodeFeatures: 1 2Cathode Anode• Standard Zener Breakdown Voltage Range − 2.4 V to 75 V• Steady State Po ..


MIG150Q101H
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MIG150Q101H TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG150Q101H

High Power Switching Applications
Motor Control Applications Integrates inverter power & control circuits (IGBT drive units, protection units for over-current, under-voltage
& over-temperature) in one package. The electrodes are isolated from case. High speed type IGBT : VCE (sat) = 3.5 V (Max.)
toff = 3.8 µs (Max.)
trr = 0.24 µs (Max.) Package Dimensions : TOSHIBA 2-121A1A Weight : 510 g
Equivalent Circuit

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