MIG10Q805H ,N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)APPLICATIONS 4-8.0:0.4 ra.-f.Lt2t-tla4 6-3.tWh4 N,p N NI Pl EU EV mémmmm m;GU GV GW m5.tHc0.2 m|"|" ..
MIG150J202HC ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter, brake power circuits & control circuits (IGBT drive units, pr ..
MIG150J7CSB1W ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter, brake power circuit and control circuits (IGBT drive units, ..
MIG150Q101H ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter power & control circuits (IGBT drive units, protection units f ..
MIG150Q201H ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter, brake power circuits & control circuits (IGBT drive units, pr ..
MIG150Q6CMB1X ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter power circuits and control circuits (IGBT drive units, and un ..
MM3Z4V3 ,Zener Voltage Regulator DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA for all typ ..
MM3Z4V3B ,4.3V 200mW 2% Zener, SOD323FFeatures• Wide Zener Voltage Range Selection, 2.4V to 75V• VZ Tolerance Selection of ±2% (B Series) ..
MM3Z4V3ST1 ,Zener Voltage Regulator DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA for all typ ..
MM3Z4V3T1 ,Zener Voltage Regulator Diode2MM3Z2V4T1 SERIES
MM3Z4V3T1G ,Zener Voltage Regulator Diode2MM3Z2V4T1 SERIES
MM3Z4V7 ,Zener Voltage Regulator Diode2MM3Z2V4T1 SERIES
MIG10Q805H
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
TOSHIBA MIG10Q805H
TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT
hhlllG1l0Q805H
HIGH POWER SWITCHING APPLICATIONS Unit in mm
MOTOR CONTROL APPLICATIONS ' .4 343.0:04 .4 “4
EU EV EW GYE 9,
P N NI PIGU GV GW GXIG tMi.8+_0.2 ,
. . A HI th th tt " tt ttt T
o Integrates Inverter, Converter Power Circuits , 65:04 ' I TI , I tf , m. A g
in One Package. E a ,
t9 I'“""“"i ’ n. J
0 Output (Inverter Stage) 4' " i A Iii' J-
try, ‘ " . ————————— ta.
23¢ 10A/1200V IGBT Ill ill Ill TI w Ill h l 9."
L ' ' ' ' 24010.4 '
0 Input (Converter Stage) R ttate'"'-"""'' Jer -_
: 3¢ 15A/1600V Silicon Rectifier = 600103 B.0t0.5 ..'---
o The Electrodes are Isolated from Case. e 80.0t0.5 163:9
4.0102 = 40.8102
f I:II:II l
' 2,0t0.2
JEDEC -
EIAJ -
TOSHIBA 2-81B1A
EQUIVALENT CIRCUIT Weight : 66g
T C " ' '
I Guo-' two-st Gwo-' 1:
Ro- EU Evo- EW
Sc U r-tpFr W
1! 1E 1F GXCY-' "Yo-e GZo-'
o c . . 0E
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1998-06-10 1/7
TOSHIBA MIG10Q805H
MAXIMUM RATINGS (Ta = 25°C)
STAGE CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES i20 V
D I 1 A
Collector Current C C 0
Inverter lms ICP 20 A
F d C t DC IF 10 A
orwar urren lms IFM 20 A
Collector Power Dissipation
(Tc=25°C) PC 56 W
Repetitive Peak Reverse Voltage VRRM 1600 V
Average Output Rectified Current 10 15 A
Converter
Peak One Cycle Surge Forward I 250 A
Current (50Hz, Non-Repetitive) FSM
Junction Temperature Ti 150 °C
Storage Temperature Range Tstg -40--125 T
Module . 2500
Isolation Voltage V1501 (AC 1 minute) V
Screw Torque - 1.5 Nan
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
a. Inverter stage
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE= i20V, VCE=0 - - i500 nA
Collector Cut-off Current ICES VCE=1200V, VGE=0 - - 1.0 mA
Gate-Emitter Cut-off Voltage VGE (off) IC=10mA, VCE=5V 3.0 - 6.0 V
Collector-Emitter Saturation
= = - 2.80 3.40
Voltage VCE (sat) IC 10A, VGE 15V V
Input Capacitance Cies VCE= 10V, VGE =0, f = 1MHz - 1200 - pF
Rise Time tr Vcc=600V - 0.07 0.15
Switching Turn-on Time ton IC=10A - 0.15 0.30
Tim . VGE = i 15V gs
e Fall Time tf RG-- 1200 - 0.10 0.30
Turn-off Time toff (Note 1) - 0.60 1.20
Forward Voltage VF IF=10A, VGE--0, - 2.20 3.0 V
. IF=10A, VGE= -10V
Reverse Recovery Time trr di / dt=150 A /ps - 0.10 0.25 gs
. Transistor - - 2.20 o
Thermal Resistance Rth (i-e) Diode - - 3.09 C / W
1998-06-10 2/7
TOSHIBA MIG10Q805H
b. Converter stage
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Repetitive Peak Reverse
I V = 1600V - - 0 A
Current RRM RRM 5 '
Peak Forward Voltage VFM IFM=15A - 1.05 1.20 V
Peak One Cycle Surge Forward .
Current IFSM 50Hz sine-half-wave 250 - - A
Thermal Resistance Rth (i-e) - - - 2.80 °C/W
(Note 1) Switching Time Test Circuit & Timing Chart
t I toff
1998-06-10 3/7
TOSHIBA
MIG10Q805H
a. INVERTER STAGE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT 10 (A)
COLLECTOEEMITTER VOLTAGE VCE (V)
IC - VCE
COMMON EMITTER
10 Te = 25°C
2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON EMITTER
Tc = 25°C
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON EMITTER
Te = - 40°C
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOREMITTER VOLTAGE VCE (V) COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT 1C (A)
IC - VCE
COMMON
EMITTER
Tc = 125°C
2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON EMITTER
Tc = 125°C
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
10 - VGE
Tc = 125°C
COMMON EMITTER
VCE = 5V
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
1998-06-10 4/7
TOSHIBA MIG10Q805H
a. INVERTER STAGE
SWITCHING TIME - IC SWITCHING TIME - RG
COMMON EMITTER
toff VCC = 600V
VGE= ilSV Tc=25''C
IC=1OA - Tc=125°C
a 0.1 a 1
0.01 0.1
COMMON EMITTER
VCC =600V
VGE= i 15V Tc=25°C
RG=1209 - Tc=125°C
0.001 0.01
1 10 100 10 100 1000
COLLECTOR CURRENT 10 (A) GATE RESISTANCE RG (Q)
SWITCHING LOSS - IC SWITCHING LOSS - RG
t t COMMON EMITTER
0.1 Vcc=600V
COMMON EMITTER VGE = 1’ 15V
Vcc=600V 0 IC-- 10A
VGE=il5V Te--25t Tc=25°C
0.3 RG=1209 --- Tc=125°C ----Tc--125'C
. 1 10 100 '10 100 1000
COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Q)
1998-06-10 5/7
TOSHIBA MIG10Q805H
a. INVERTER STAGE
C - VCE VCE, VGE - QG
10000 ' 800
COMMON EMITTER V S
VGE=0V 8 VCE=0V v
f=lMHz > g,
Tc=25°C W2 600 >
r: ti' til
e- Fw o
1000 ti if,
O > 400 ti
ti E w
t'; ii COMMON EMITTER 'sr-"":
g g 200 RL=600 ii
100 = o '
5 ii Tc 25''C ti
0 20 40 60 80 100
CHARGE QG (nC)
l 10 100 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
IF - VF s, trr, Irr, Edsw - IF
COMMON CATHODE v)
A VGE=0V F Ci
<2 a" a g
E 1% g
H 43‘ o M 1
a a Ft a
n: E M 0
5 B t "
o ig o g
Q Tc=25°C m E M
pd > _ o 1
"t o CN o .
tr ,3; E B
g M , r: COMMON CATHODE
1:. M M rd VCC=600V - o
g mg VGE---10V Tc--25oc
mam . ---Tc--125''C
>< > di/dt=150A/ps c=
m n: m 0.01
0 1 2 3 4 5 M m a: 0 2 4 6 8 10
FORWARD VOLTAGE " (A) FORWARD CURRENT ly (A)
1998-06-10 6/7
TOSHIBA
a. INVERTER STAGE
Rth (t) - tw
n: ' 1
E t? 0.1
0.001 0.01 0.1 1 10
FORWARD CURRENT IF (A)
PULSE WIDTH tw (s)
CONVERTER STAGE
COMMON CATHODE
0 0.5 1 1.5 2
FORWARD VOLTAGE " (V)
COLLECTOR CURRENT 10 (A)
TRANSIENT THERMAL RESISTANCE
Rthu) (°C/W)
MIG10Q805H
REVERSE BIAS SOA
Tjs-c 125°C
VGE= i 15V
RG--120n
200 400 600 800 1000 1200 1400
COLLECTOR-EMITTER VOLTAGE VCE (V)
Rth (t) - tw
Tc = 25''C
0.01 0.1 l 10
PULSE WIDTH tw (s)
1998-06-10 7/7
www.ic-phoenix.com
.
