MHW7185A ,High Ouput Power Doubler 750 MHz CATV AmplifierFeatures ion–implanted, arsenic emitter transistors with an all gold metallization system.750 MHz, ..
MHW7185C ,MHW7185C 750 MHz, 19.4 dB Gain, 110-Channel CATV Amplifier ModuleELECTRICAL CHARACTERISTICS (V = 24 Vdc, T = +30°C, 75 Ω system unless otherwise noted)CC CCharacter ..
MHW7205C ,750 MHz, 20.2 dB Gain, 24 V 110–Channel CATV Amplifier Module
MHW7205C ,750 MHz, 20.2 dB Gain, 24 V 110–Channel CATV Amplifier Module
MHW7222 ,22 dB GAIN 750/860 MHz 110/128 CHANNEL CATV AMPLIFIERS**Order this documentSEMICONDUCTOR TECHNICAL DATAby MHW7222/DThe RF Line * **"* * **" ** ** !22 dB ..
MHW7222A ,22 dB GAIN 750 MHz 110 CHANNEL CATV AMPLIFIERfeatures22 dB GAINion–implanted, arsenic emitter transistors, an all gold metallization system and7 ..
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MIP3E3SMY , MIP3E3SMY
MIP3E3SMY , MIP3E3SMY
MIP504 ,Power Deviceapplications intended.(4) The products and product specifications described in this material are su ..
MIP514 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitOn-state res ..
MIP516 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitDrain-source ..
MHW7185A
High Ouput Power Doubler 750 MHz CATV Amplifier
The RF Line! ! " !# - -
Designed specifically for 750 MHz CATV applications. Features ion–
implanted, arsenic emitter transistors with an all gold metallization system. Supply Voltage = 24 Vdc 6th Generation Die Technology Specified for 110 Channel Performance Broadband Power Gain @ f = 50 MHz
Gp = 18 dB Min (MHW7185A)
Gp = 19.5 dB Min (MHW7205A) Broadband Noise Figure @ f = 50 MHz
NF = 6 dB Max Improvement in Distortion Over Conventional Hybrids Allows Higher Output Level Operation
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30°C, 75 Ω system, unless otherwise noted)
