IC Phoenix
 
Home ›  MM130 > MHW1224,MHW1224 5.0-200 MHZ, 22 dB RF CATV Amplifier
MHW1224 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
MHW1224MOTN/a2avaiMHW1224 5.0-200 MHZ, 22 dB RF CATV Amplifier


MHW1224 ,MHW1224 5.0-200 MHZ, 22 dB RF CATV AmplifierFeatures all gold metallization system. 5.0–200 MHzCATV HIGH–SPLIT• Guaranteed Broadband Power Gain ..
MHW1244N , CATV Amplifier Module
MHW1304L ,MHW1304L 30 dB, 50 MHz, 24 Vdc RF CATV Low Current AmplifierFeatures all gold metallization system.30 dB• Guaranteed Broadband Power Gain50 MHz• Guaranteed Bro ..
MHW1815 ,Microwave Bipolar Power AmplifierMAXIMUM RATINGSRating Symbol Value UnitDC Supply Voltage V 28 VdcSDC Bias Voltage V 5.5 VdcBRF Inpu ..
MHW1915 ,Microwave Bipolar Power Amplifier**Order this documentSEMICONDUCTOR TECHNICAL DATAby MHW1915/DThe RF Line** * • Specified 26 Volt C ..
MHW2821-1 ,UHF Silicon FET Power AmplifierELECTRICAL CHARACTERISTICS (continued) (V = V = 12.5 Vdc, V = 12.5 Vdc, T = +25°C, 50 Ω system, unl ..
MIP301 ,Silicon MOS ICBlock DiagramVINAuto-restart Drain pin0Control pin Shutdown/Auto-restartPower supply Auto-restart c ..
MIP3E3SMY , MIP3E3SMY
MIP3E3SMY , MIP3E3SMY
MIP504 ,Power Deviceapplications intended.(4) The products and product specifications described in this material are su ..
MIP514 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitOn-state res ..
MIP516 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitDrain-source ..


MHW1224
MHW1224 5.0-200 MHZ, 22 dB RF CATV Amplifier
NOT RECOMMENDED FOR NEW DESI
NOT RECOMMENDED FOR NEW DESIGN
The RF Line

��� ����������
�������� ���������
Designed specifically for broadband applications requiring low distortion
characteristics. Specified for use as return amplifiers for mid–split and
high–split 2–way cable TV systems. Features all gold metallization system. Guaranteed Broadband Power Gain @ f = 5.0–200 MHz Guaranteed Broadband Noise Figure @ f = 5.0–175 MHz Superior Gain, Return Loss and DC Current Stability with Temperature All Gold Metallization All Ion–Implanted Arsenic Emitter Transistor Chips with 6.0 GHz fT’s Circuit Design Optimized for Good RF Stability Under High VSWR Load
Conditions Transformers Designed to Ensure Good Low Frequency Gain Stability
versus T emperature
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30°C, 75 � system)

NOTES: Response and return loss characteristics are tested and guaranteed for the full 5.0–200 MHz frequency range. Motorola 100% distortion and noise figure testing is performed over the 5.0–175 MHz frequency range. Cross modulation and composite
triple beat testing are with 22–channel loading; Video carriers used are:
T7–T13 7.0–43.0 MHz 7–Channels
2–6 55.25–83.25 MHz 5–Channels
A–7 121.25–175.25 MHz 10–Channels Video carriers used for 12–Channel typical performances are T7–6; For 26–Channel typical performance, Channels 8, 9, 10 and 11 are
Order this document
by MHW1224/D
��������
SEMICONDUCTOR TECHNICAL DATA
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED