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MHPA21010
MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier
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Designed for Class AB amplifier applications in 50 ohm systems operating in
the UMTS frequency band. A silicon FET design provides outstanding linearity
and gain. In addition, the excellent group delay and phase linearity characteris-
tics are ideal for digital modulation systems. Typical W–CDMA Performance for VDD = 28 Volts, Vbias = 8 Volts,
IDQ = 550 mA, Channel Bandwidth = 3.84 MHz, Adjacent Channels
at ± 5 MHz, ACPR Measured in 3.84 MHz Bandwidth.
Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF, 3GPP Test Model 1,
64 DTCH. Adjacent Channel Power: –50 dBc @ 30 dBm, 5 MHz Channel Spacing Power Gain: 24 dB Min (@ f = 2140 MHz) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, VBIAS ≅ 8 V Set for Supply Current of 550 mA, TC = 25°C, 50 Ω System)
