MHL9318 ,MHL9318 860-900 MHz, 3 W, 17.5 dB RF Linear LDMOS Amplifier Order this documentSEMICONDUCTOR TECHNICAL DATAby MHL9318/DThe RF Line ..
MHPA18010 ,MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MHPA180 ..
MHPA21010 ,MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier Order this documentSEMICONDUCTOR TECHNICAL DATAby MHPA21010/DThe RF Line ..
MHPM6B10A60D ,Hybrid Power ModuleELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MHPM7A15A60A ,Hybrid Power ModuleELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MHPM7B12A120A ,Hybrid Power Module**Order this documentSEMICONDUCTOR TECHNICAL DATA by MHPM7B12A120A/D*Motorola Preferred Device ** I ..
MIP153 ,IPDElectrical Characteristics (Tc= 25± 2˚C)Parameter Symbol Condition Min Typ Max Unitf I = 4mA 90 100 ..
MIP160 ,Silicon MOS ICIntelligent Power Devices (IPDs) PanasonicMIP160, MIP162, MIP163, MIP164, MIP165, MIP166Silicon MOS ..
MIP161 ,Silicon MOS ICBlock DiagramAt startup - Drain pinControl pin Power pin changeover GD .-oO I / Start current-sourc ..
MIP162 ,Silicon MOS ICFeatures 10.5i0.5...-- 45:020 Single chip IC with high breakdown voltage power MOS FET and N 95mg 1 ..
MIP163 ,Silicon MOS ICApplications n P-'" 1?$lc0.20 Switching mode regulator (5 to 40W) r)',i,l 'ii, 0.8uF0.1 u!0 AC adap ..
MIP163 ,Silicon MOS ICFeatures 10.5i0.5...-- 45:020 Single chip IC with high breakdown voltage power MOS FET and N 95mg 1 ..
MHL9318
MHL9318 860-900 MHz, 3 W, 17.5 dB RF Linear LDMOS Amplifier
The RF Line�������� ����
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Designed for ultra–linear amplifier applications in 50 ohm systems operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA and CDMA. Third Order Intercept: 49 dBm Typ Power Gain: 17.5 dB Typ (@ f = 880 MHz) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications For Use in TDMA and CDMA Multi–Carrier Applications
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, TC = 25°C; 50 Ω System)
