MHL19936 ,MHL19936 1900-2000 MHz, 12 W, 29 dB RF Linear LDMOS Amplifier Order this documentSEMICONDUCTOR TECHNICAL DATAby MHL19936/DThe RF Line ..
MHL21336 ,MHL21336 2110-2170 MHz, 3 W, 31 dB RF Linear LDMOS Amplifier Order this documentSEMICONDUCTOR TECHNICAL DATAby MHL21336/DThe RF Line ..
MHL9236 ,MHL9236, MHL9236M 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS AmplifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDC Supply Voltage V 30 Vd ..
MHL9318 ,MHL9318 860-900 MHz, 3 W, 17.5 dB RF Linear LDMOS Amplifier Order this documentSEMICONDUCTOR TECHNICAL DATAby MHL9318/DThe RF Line ..
MHPA18010 ,MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MHPA180 ..
MHPA21010 ,MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier Order this documentSEMICONDUCTOR TECHNICAL DATAby MHPA21010/DThe RF Line ..
MIP111 ,IPDMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
MIP115 ,IPDElectrical Characteristics (T = 25˚C)CConditionParameter Symbol Min Typ Max UnitC = 0pF/200pFf EXT ..
MIP153 ,IPDElectrical Characteristics (Tc= 25± 2˚C)Parameter Symbol Condition Min Typ Max Unitf I = 4mA 90 100 ..
MIP160 ,Silicon MOS ICIntelligent Power Devices (IPDs) PanasonicMIP160, MIP162, MIP163, MIP164, MIP165, MIP166Silicon MOS ..
MIP161 ,Silicon MOS ICBlock DiagramAt startup - Drain pinControl pin Power pin changeover GD .-oO I / Start current-sourc ..
MIP162 ,Silicon MOS ICFeatures 10.5i0.5...-- 45:020 Single chip IC with high breakdown voltage power MOS FET and N 95mg 1 ..
MHL19936
MHL19936 1900-2000 MHz, 12 W, 29 dB RF Linear LDMOS Amplifier
The RF Line��� ����
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Designed for ultra–linear amplifier applications in 50 ohm systems operating in
the PCS frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital modulation systems, such as TDMA and
CDMA. Third Order Intercept: 49.5 dBm Typ Power Gain: 29 dB Typ (@ f = 1960 MHz) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25°C; 50 Ω System)
