MHL19926 ,MHL19926 1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier Order this documentSEMICONDUCTOR TECHNICAL DATAby MHL19926/DThe RF Line ..
MHL19936 ,MHL19936 1900-2000 MHz, 12 W, 29 dB RF Linear LDMOS Amplifier Order this documentSEMICONDUCTOR TECHNICAL DATAby MHL19936/DThe RF Line ..
MHL21336 ,MHL21336 2110-2170 MHz, 3 W, 31 dB RF Linear LDMOS Amplifier Order this documentSEMICONDUCTOR TECHNICAL DATAby MHL21336/DThe RF Line ..
MHL9236 ,MHL9236, MHL9236M 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS AmplifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDC Supply Voltage V 30 Vd ..
MHL9318 ,MHL9318 860-900 MHz, 3 W, 17.5 dB RF Linear LDMOS Amplifier Order this documentSEMICONDUCTOR TECHNICAL DATAby MHL9318/DThe RF Line ..
MHPA18010 ,MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MHPA180 ..
MIP111 ,IPDMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
MIP115 ,IPDElectrical Characteristics (T = 25˚C)CConditionParameter Symbol Min Typ Max UnitC = 0pF/200pFf EXT ..
MIP153 ,IPDElectrical Characteristics (Tc= 25± 2˚C)Parameter Symbol Condition Min Typ Max Unitf I = 4mA 90 100 ..
MIP160 ,Silicon MOS ICIntelligent Power Devices (IPDs) PanasonicMIP160, MIP162, MIP163, MIP164, MIP165, MIP166Silicon MOS ..
MIP161 ,Silicon MOS ICBlock DiagramAt startup - Drain pinControl pin Power pin changeover GD .-oO I / Start current-sourc ..
MIP162 ,Silicon MOS ICFeatures 10.5i0.5...-- 45:020 Single chip IC with high breakdown voltage power MOS FET and N 95mg 1 ..
MHL19926
MHL19926 1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier
The RF Line��� ����
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Designed for ultra–linear amplifier applications in 50 Ohm systems operating
in the PCS frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital modulation systems, such as TDMA, EDGE
and CDMA. Third Order Intercept Point: 50 dBm Typ Power Gain: 29.4 dB Typ (@ f = 1960 MHz) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Application
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = +25°C; VDD = 26 Vdc; 50 Ω System)
