MGW20N60D ,Insulated Gate Bipolar Transistor with Anti-Parallel DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MH101 , High Dynamic Range MMIC Mixer
MH101 , High Dynamic Range MMIC Mixer
MH102 , High Dynamic Range MMIC Mixer
MH102 , High Dynamic Range MMIC Mixer
MH1A-G , High Dynamic Range PCS-Band MMIC Mixer
MINISMDE190F-2 , PolySwitch Resettable Devices Strap Battery Devices
MINISMDE190F-2 , PolySwitch Resettable Devices Strap Battery Devices
MIP0100SY ,IPDBlock DiagramAuto-restart Drain pinControl pin Shutdown/Auto-restartAuto-restart current-sourcePowe ..
MIP0101SY ,IPDapplications or general electronic equipment (such as office equipment, communications equipment, m ..
MIP0102SY ,IPDElectrical Characteristics (T = 25 ± 2°C)CParameter Symbol Conditions min typ max UnitOutput freque ..
MIP0103SY ,IPDFeaturesunit: mml Single chip IC with high breakdown voltage power MOS FET and10.5±0.5CMOS control ..
MGW20N60D
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
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N–Channel Enhancement–Mode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operations at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost. Industry Standard High Power TO–247 Package with
Isolated Mounting Hole High Speed Eoff: 60 J per Amp typical at 125°C High Short Circuit Capability – 10 s minimum Soft Recovery Free Wheeling Diode is included in the package Robust High Voltage Termination Robust RBSOA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
