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MGSF2P02HDT1ONN/a2883avaiPower MOSFET 2 Amps, 20 Volts


MGSF2P02HDT1 ,Power MOSFET 2 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MGSF3441VT1 ,OBSOLETEELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MGSF3442VT1 ,OBSOLETEELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MGSF3442VT1 ,OBSOLETE
MGSF3454VT1 ,N-CHANNEL ENHANCEMENT-MODE TMOS MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MGSF3454XT1 ,N-CHANNEL ENHANCEMENT-MODE TMOS MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MINISMDE190F-2 , PolySwitch Resettable Devices Strap Battery Devices
MINISMDE190F-2 , PolySwitch Resettable Devices Strap Battery Devices
MIP0100SY ,IPDBlock DiagramAuto-restart Drain pinControl pin Shutdown/Auto-restartAuto-restart current-sourcePowe ..
MIP0101SY ,IPDapplications or general electronic equipment (such as office equipment, communications equipment, m ..
MIP0102SY ,IPDElectrical Characteristics (T = 25 ± 2°C)CParameter Symbol Conditions min typ max UnitOutput freque ..
MIP0103SY ,IPDFeaturesunit: mml Single chip IC with high breakdown voltage power MOS FET and10.5±0.5CMOS control ..


MGSF2P02HDT1
Power MOSFET 2 Amps, 20 Volts
MGSF2P02HD
Power MOSFET 2 Amps, 20 Volts
P−Channel TSOP−6

This device represents a series of Power MOSFETs which are
capable of withstanding high energy in the avalanche and
commutation modes and the drain−to−source diode has a very low
reverse recovery time. These devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
Features
Miniature TSOP−6 Surface Mount Package − Saves Board Space Low Profile for Thin Applications such as PCMCIA Cards Very Low RDS(on) Provides Higher Efficiency and Expands
Battery Life Logic Level Gate Drive − Can Be Driven by Logic ICs Diode is Characterized for Use in Bridge Circuits Diode Exhibits High Speed, with Soft Recovery IDSS Specified at Elevated Temperatures Avalanche Energy Specified Package Mounting Information Provided
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