MGP15N40CL ,Ignition IGBT 15 Amps, 410 VoltsELECTRICAL CHARACTERISTICS (continued)Characteristic Symbol Test Conditions Temperature Min Typ Max ..
MGR2018CT ,Power Manager Gallium Arsenide Power Rectifierfeatures:GALLIUM ARSENIDE• Planar Epitaxial ConstructionRECTIFIER• Nitride Passivation for Stable B ..
MGS05N60D ,Insulated Gate Bipolar TransistorTHERMAL CHARACTERISTICSThermal Resistance — Junction to Case – IGBT R 25 °C/WθJC— Junction to Ambie ..
MGS13002D ,Insulated Gate Bipolar TransistorTHERMAL CHARACTERISTICSThermal Resistance — Junction to Case – IGBT R 25 °C/WθJC— Junction to Ambie ..
MGS71008 ,Absorptive SPDT GaAs MMIC Switch
MGS71008 ,Absorptive SPDT GaAs MMIC Switch
MIG20J501L ,MIG20J501LFEATURES (1) Maximum Rating V 600 V, I 20 A CES C(2) Control IC High voltage IC 3 low vo ..
MIG20J805H ,N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)APPLICATIONS 4-8.0:0.4 ra.-f.Lt2t-tla4 6-3.tWh4 N,p N NI Pl EU EV mémmmm m;GU GV GW m5.tHc0.2 m|"|" ..
MIG300J101H ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter power circuits & control circuits (IGBT drive units, protectio ..
MIG300J2CSB1W ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter power circuits and control circuits (IGBT drive unit, units f ..
MIG300Q2CMB1X ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter power circuits and control circuits (IGBT drive unit, units f ..
MIG30J103H ,TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBTAPPLICATIONSI Intelligent Power Module that include IGBT drive circuits, overcurrent, undervoltage ..
MGP15N40CL
Ignition IGBT 15 Amps, 410 Volts
MGP15N40CL,
MGB15N40CL
Preferred DeviceIgnition IGBT
15 Amps, 410 Volts
N–Channel TO–220 and D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required. Ideal for Coil–On–Plug, IGBT–On–Coil, or Distributorless Ignition
System Applications High Pulsed Current Capability up to 50 A Gate–Emitter ESD Protection Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices Low Saturation Voltage Optional Gate Resistor (RG)
MAXIMUM RATINGS (–55°C ≤ TJ ≤ 175°C unless otherwise noted)
UNCLAMPED COLLECTOR–TO–EMITTER AVALANCHE
CHARACTERISTICS (–55°C ≤ TJ ≤ 175°C)
