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MG75J1ZS40
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG75J12S40
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
hhlG75rilzS40
HIGH POWER SWITCHING APPLICATIONS. Unit in mm
MOTOR CONTROL APPLICATIONS. 2-FAST-ON-TAB #110
2- 5.6:t0.3
High Input Impedance
0 High Speed : tf=0.35sm(Max.)
trr = 0.15/15 (Max.)
23d: 0.5
8 od: 0.3
0 Low Saturation Voltage
I VCE (sat) :3.5V (Max.)
9351: 0.5
o Enhancement-Mode
4i0.5 4i0.5
o The Electrodes are Isolated from Case. 18d:0.5 19d:0.5 mi” 9.9t0.8 27i0.5
EQUIVALENT CIRCUIT i i i jtrtm
I i I I
_‘1_ 3.0i0.5
CIO-ht i Ir T 0E2 9 91:05 _ l 33.355
l JEDEC -
E1 / C2 G2 EIAJ -
TOSHIBA 2-94D2A
Weight : 202g
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 600 V
Gate-Emitter Voltage VGES ":20 V
Collector Current C C 5 A
lms ICP 150
Forward Current C F 5 A
lms IFM 150
Collector Power Dissipation (Tc=25°C) PC 350
Junction Temperature Ti 150 T
Storage Temperature Range Tstg -40-125 T
Isolation Voltage VIsol 2500 (AC, 1 minute) V
Screw Torque (Terminal/ Mounting) - 3/3 Nm
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
l implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-03-03 1/5
TOSHIBA MG75J1ZS40
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i' 20V, VCE = 0 - - i' 500 nA
Collector Cut-off Current ICES VCE=600V, VGE=0 - - 1.0 mA
Collector-Emitter -
Breakdown Voltage V (BR) CES IC - 10mA, VGE - 0 600 - - V
Gate-Emitter Cut-off -
Vol tage VGE (off) IC - 7 5mA, VCE - 5V 3.0 - 6.0 V
Collector-Er/ter -
Saturation Voltage VCE (sat) IC - 75A, VGE - 15V - 2.7 3.5 V
. . VCE=10V, VGE=0,
Input Capacitance Cies f= 1MHz - 6800 - pl?
Rise Time tr - 0.30 0.60
. . . 15V 33n cl
Switching Turn-on Time ton 0 l: oe'i'du " - 0.40 0.80 s
Time Fall Time tf 15V . - 0.18 0.35
Turn-off Time toff 300V - 0.60 1.00
Forward Voltage VF IF = 75A, VGE = 0 - 1.7 2.5 V
. IF = 75A, VGE = - 10V,
- . .1
Reverse Recovery Time trr di / dt= 100A /ps 0 08 0 5 ,us
Th 1 R . t R Transistor - - 0.35 "C/W
erma es1s ance th (j-e) Diode - - 0.83
1997-03-03 2/5
TOSHIBA
MG75J1ZS40
COLLECTOR CURRENT 10 (A)
COLLEC’FOKEMITTER VOLTAGE VCE
COLLECTOR CURRENT 10 (A)
IC - VCE
COMMON 20 15 12
EMITTER
Te = 25°C
2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Te = 25°C
IC =30A
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
IC - VGE
160 I I I
120 53;??? (/"
o 4 s 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTORAEMITTER VOLTAGE VCE
COLLECTORAEMITTER VOLTAGE VCE
COLLECTOREMITTER VOLTAGE VCE
COMMON
EMITTER
Te = - 40°C
VCE - VGE
8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COMMON
EMITTER
To = 125°C
VCE - VGE
Ic=30A
8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE, VGE - QG
COMMON
EMITTER
RL = "
Tc = 25°C
GATE—EMIT’I‘ER VOLTAGE VGE
200 300 400 500
CHARGE QG (nC)
1997-03-03 3/5
TOSHIBA
SWITCHING TIME (p3)
IF (A)
FORWARD CURRENT
CAPACITANCE C (1117)
SWITCHING TIME - IC
COMMON EMITTER
V =300V
'/hi=-- i15V
Ra=330
- :Tc--25''C
---- :Tc=125’C
0 20 40 60 80 100
COLLECTOR CURRENT 1C (A)
IF - VF
COMMON / I /
CATHODE
120 VGE--0 ///
7, _'i'
0 0.8 1.6 2.4 3.2 4.0
FORWARD VOLTAGE " (V)
80 Tc=12
COMMON EMITTER
f=1MHz Cres
Tc=25°C
0.3 1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
SWITCHING TIME (,us)
PEAK REVERSE RECOVERY CURRENT
THERMAL TRANSIENT RESISTANCE
[IT (A)
REVERSE RECOVERY TIME t" (XIOOns)
Rth (t) (”CIW)
MG75J1ZS40
SWITCHING TIME - RG
- : Tc=25°C
---- :Tc=125°C
COMMON
EMITTER
VCC = 300V
10 = 75A
VGE -- i 15v
1 3 5 10 30 50 100
GATE RESISTANCE RG (0)
trr, Irr - IF
- :Tc=25°C
---- :Tc=125“C
COMMON CATHODE
di/dt= 100A/ps
VGE = - 10V
20 40 60 80 100
FORWARD CURRENT IF (A)
Rth (t) - tw
DIODE STAGE
SISTOR STAGE
0-3 10-2 IO-l 1 10
PULSE WIDTH tw (s)
1997-03-03 4/5
TOSHIBA
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
-ID MAX.(PULSED)iM l l Ill
50 si.K
100 s. \\“ ' -
50 ID MAX. IOO/ISX
30 (CONTINUOUS) 'te I
Illllll I II N 1ms>2<\\
10 ik. SINGLE l
NONREPETITIVE _ _ _
5 PULSE Tc=25°C ,
3 CURVES MUST BE ",
DERATED LINEARLY N
1 WITH INCREASE IN C b,
TEMPERATURE. OPERATIO _
0 I I -
3 1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT 1C (A)
MG75J1ZS40
REVERSE BIAS SOA
Tis 125°C
VGE= i15V
Rg=380
100 200 300 400 500 600 700
COLLECTOR-EMITTER VOLTAGE VCE (V)
1997-03-03 5/5
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