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MG600Q1US51
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT
MG600Q1US51 High Power Switching Applications
Motor Control Applications High input impedance High speed : tf = 0.3µs (Max)
@Inductive load Low saturation voltage
: VCE (sat) = 3.6V (Max) Enhancement-mode Includes a complete half bridge in onepackage. The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C) ― 3 / 3
Weight: 465g
Unit: mm
