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MG50Q6ES50A
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG50Q6ES50A
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MG50Q6ES50A
HIGH POWER SWITCHING APPLICATIONS Unit in mm
MOTOR CONTROL APPLICATIONS
o The Electrodes are Isolated from Case.
0 High Input Impedance
42.0': 0.5
45.0 2 0.8
41.91 1 0.5
32.0 :i: 0.5
o 6 IGBTs Built Into 1 Package. 15.5 05.
11.43:o.5
1.15:0.3x1 .0103
107.2 k 0.8
e. g‘gi L'-10sp/to-.s lg.
‘3 i. i) £4}
EQUIVALENT CIRCUIT to',- Gl _
OP-F JEDEC -
EIAJ -
Io-t 5o-st so-t TOSHIBA 2-108E2A
Weight : 185g
20 O U
60 O V
10 cr-our
'so-t 7t:r-sl( 11 cy-st
4o-. 8ty-. 12 o-.
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1998-06-10 1/7
TOSHIBA MG50Q6ES50A
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES -k20 V
DC 50/ 45 A
2 CF /8 C)
Collector Current ( 51:1) 0 C)
lms (25°C/80°C) 100/90 A
DC IF 50 A
Forward Current lms IFM 100 A
Collector Power Dissipation
(Tc=25°C) PC 350 W
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg -40--125 "C
. 2500
Isolation Voltage V1301 (AC 1 minute) V
Screw Torque - 6 Nun
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE= i20V, VCE=0 - - i500 nA
Collector Cut-Off Current ICES VCE=1200V, VGE=0 - - 0.5 mA
Gate-Emitter Cut-Off Voltage VGE (off) Ic=50mA, VCE=5V 3.0 - 6.0 V
Collector-Emitter Saturation V 1C =50A, Tj =25°C - 2.8 3.2
Voltage CE (sat) VGE=15V Tj=125°C - 3.1 3.7
Input Capacitance Cies VCE = 10V, VGE = 0, f = 1MHz - 6.0 - nF
Rise Time tr VCC=600V - 0.07 0.15
Switching Turn-On Time ton IC =50A, VGE= 1- 15V - 0.15 0.30
Time Fall Time tf Rg=240, Tj=125°C - 0.07 0.10 ps
Turn-Off Time toff (Note 1) - 0.60 0.90
Forward Voltage VF IF=50A, VGE=O - 2.0 2.8 V
. IF=50A, VGE = -10V
Reverse Recovery Time trr di/dt=700A/ps - 0.10 0.25 #s
. Transistor Stage - - 0.35 o
Thermal Resistance Rth (i-e) Diode Stage - - 0.7 C/W
1998-06-10 2/7
TOSHIBA MG50Q6ES50A
(Note 1) Switching Time Test Circuit & Timing Chart
1998-06-10 3/7
TOSHIBA
MG50Q6ES50A
IC - VCE
-15 COMMON EMITTER
20 10 Te-- 25°C
COLLECTOR CURRENT 10 (A)
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON EMITTER
Tc = 25°C
IC-- 100A
COLLECTOREMITTER VOLTAGE VCE (V)
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON EMITTER
Te = - 40°C
IC=100A
COLLECTOEEMITTER VOLTAGE VCE (V)
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOREMITTER VOLTAGE VCE (V) COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT 1C (A)
IC - VCE
COMMON
20 EMITTER
Tc = 125''C
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON EMITTER
To = 125°C
IC=IOOA
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
100 10 - VGE
-40 25 /
I //Tc=125°C
COMMON EMITTER
VCE = 5V
25 //l
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
1998-06-10 4/7
TOSHIBA
MG50Q6ES50A
SWITCHING TIME (/18)
SWITCHING LOSS (mJ)
SWITCHING TIME - IC
COMMON EMITTER
Vcc=600V
VGE = i 15V
Rc--24n
Tc=25°C
- - - Tc-- 125°C
10 100
COLLECTOR CURRENT 10 (A)
SWITCHING LOSS - IC
COMMON EMITTER
Vcc=600V o
VGE=i15V Te--25t
Rc--24n --- Tc=125°C
1 10 100
COLLECTOR CURRENT 10 (A)
SWITCHING TIME (/18)
SWITCHING LOSS (mJ)
SWITCHING TIME - RG
COMMON EMITTER
VCC = 600V
VGE = uF 15V
10 = 50A
Te = 25'C
- - - Tc=125°C
1 10 100
GATE RESISTANCE RG (Q)
SWITCHING LOSS - RG
COMMON EMITTER
Vcc=600V
Tc=25°C
- - - - Tc=125°C
1 10 100
GATE RESISTANCE RG (Q)
1998-06-10 5/7
TOSHIBA MG50Q6ES50A
C - VCE VCE, VGE - QG
10000 800
CAPACITANCE C (pF)
COMMON
EMITTER
VGE = 0V
f = IMHz
Tc = 25°C
0.1 0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMON
EMITTER
RL--12Q
Tc=25°C
0 100 200 300 400 500
CHARGE " (nC)
GATE-EMITTER VOLTAGE VGE (V)
trr, Irr, Edsw - IF
In (mom
COMMON CATHODE
Vcc=600V
VGE=-10V Tc--25t
di/dt=700A/ps - - - Tc=125°C
0 10 20 30 40 50
FORWARD CURRENT IF (A)
COMMON CATHODE
VGE = 0V
0 1 2 3 l 5
REVERSE RECOVERY TXME t" (/18)
PEAK REVERSE RECOVERY CURRENT
REVERSE RECOVERY LOSS Edsw (m)
FORWARD VOLTAGE VF (V) FORWARD CURRENT IF (A)
SHORT CIRCUIT SOA
Rth(t) - tw
DIODE STAGE
TRANSISTER STAGE
R411(k) (”Cl W)
Vcc=900V
tw-- IO/ss
VGE= i 15V
Tj=125°C
COLLECTOR CURRENT 10 (A)
TRANSIENT THERMAL RESISTANCE
0.001 0.01 0.1 l 10 0 200 400 600 800 1000 1200 1400
PULSE WIDTH tw (s) COLLECTOR-EMITTER VOLTAGE VCE (V)
1998-06-10 6/7
TOSHIBA
COLLECTOR CURRENT 10 (A)
REVERSE BIAS SOA
Trs 125°C
VCE = , 15V
RG=24Q
200 400 600 800 1000 1200 1400
COLLECTOR-EMITTER VOLTAGE VCE (V)
MG50Q6ES50A
1998-06-10 7/7
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