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MG50Q2YS40
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG50Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT
MG50Q2YS40 High Power Switching Applications.
Motor Control Applications. High input impedance High speed: tf = 0.5µs (max.)
trr = 0.5µs (max.) Low saturation voltage
: VCE(sat) = 4.0V (max.) Enhancement−mode Includes a complete half bridge in one package. The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C) VGES ±20
Unit in mm
Weight: 202g
