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MG50J2YS50
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG50J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT
MG50J2YS50 High Power Switching Applications
Motor Control Applications The electrodes are isolated from case. High input impedance. Includes a complete half bridge in one package. Enhancement-mode. High speed : tf = 0.30µs (Max.) (IC = 50A)
trr = 0.15µs (Max.) (IF = 50A) Low saturation voltage
: VCE (sat)=2.70V (Max.) (IC=50A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C) ― 3 / 3
Weight: 202g (typ.)
Unit: mm
000707EAA2
