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MG50J1BS11
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG50JIBS11
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
hhlG50jMBS1ll
HIGH POWER SWITCHING APPLICATIONS. Unit in mm
MOTOR CONTROL APPLICATIONS.
0 High Input Impedance
a High Speed : tf=1.0/xs(Max.) (10:50A) g
0 Low Saturation Voltage : VCE(Sat)=2.7V(Max.) (Ic=50A) , tO
!l! 325:0.4
o Enhancement-Mode " 48.3d:
o The Electrodes are Isolated from Case. 5
EQUIVALENT CIRCUIT "ar'"--''-'-" . E144“:
C m . l ot
(,, , '; I I l l I
G o-l tl
JEDEC -
EIAJ -
TOSHIBA 2-33F1A
Weight : 86g
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 600 V
Gate-Ernitter Voltage VGES -3c20 V
Collector Current DC IC 50 A
lms ICP 100
Collector Power Dissipation PC 150 W
J unction Temperature Tj 150 °C
Storage Temperature Range Tstg -40--125 T
Isolation Voltage VIsol 2500 (AC 1 Minute) V
Screw Torque (Terminal/ Mounting) - 2/ 3 Nan
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the aptplications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-03-03 1/4
TOSHIBA MGSOJ1BS11
ELECTRICAL CHARACTERISTICS (Ta = 25''C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i- 20V, VCE = 0 - - k 500 nA
Collector Cut-off Current ICES VCE = 600V, VGE =0 - - 1.0 mA
Gate-Emitter Cut-off Voltage VGE(OFF) IC = 50mA, VCE = 5V 3.0 - 6.0
Collector-Er/ter
Saturation Voltage VCE(sat) IC - 50A, VGE - 15V - 2.3 2.7
Input Capacitance Cies VCE = 10V, VGE = o, f = 1MHz - 3500 - pl?
Rise Time tr - 0.3 0.8
. 510 cl
Turn-on Time ton + 15V o'lii'-l co - 0.4 1.0
Switching Time -rL/ ,as
Fall Time tf - 15V - 0.6 1.0
Turn-off Time toff 300V - 1.0 1.6
Thermal Resistance Rthgzc) - - - 0.83 °C / W
1997-03-03 2/4
TOSHIBA
M65011 BS11
10 (A)
COLLECTOR CURRENT
COLLECTOR—EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
IC - VCE
COMMON EMITTER
Te = 25''C
VGE=7V
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Tc = 25°C
IC =20A
o 4 s 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
IC - VGE
COMMON EMITTER
VCE=5V
80 Te: -40''C tfed
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMI’I‘TER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMON
EMITTER
Tc = - 40°C
VCE - VGE
IC = 20A
6 8 10 12
GATE-EMITTER VOLTAGE VGE (V)
COMMON
EMITTER
Tc = 125°C
VCE - VGE
IC=20A
8 12 16 2O
GATE-EMITTER VOLTAGE VGE (V)
COMMON
EMITTER
Tc=25°C
VCE, VGE - QG
VCE=0V
GATEEMITTER VOLTAGE VGE
so 120 160 200
CHARGE QG (nC)
1997-03-03 3/4
TOSHIBA
M65011 BS11
SWITCHING TIME (/15)
CAPACITANCE C
COLLECTOR CURRENT
SWITCHING TIME - IC
COMMON EMITTER
Vcc=300V
0.1 VGE = i 15V
Rg=510
Tc=25°C
10 20 30 40 50
COLLECTOR CURRENT IC (A)
C - VCE
300 COMMON
EMITTER
100 VGE--0
f=1MHz
50 Tc=25°C Cres
0.5 1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
SAFE OPERATING AREA
HHH! I l 1 H1!!!
IC MAX. (PULSED) IK.
100: N _ 50psiK.
: IC MAX. (CONTINUOUS) N
50 I rlll I N l
30 P?.OPERAWNn-Wx
I I I I
10 X SINGLE lmsX
NONREPETITIVE \
5 PULSE Tc=25°C ',
3 CURVES MUST BE _ h,
DERATED LINEARLY _
1 WITH INCREASE IN l
TEMPERATURE. "s,
'0.3 1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
SWITCHING TIME (/15)
THERMAL TRANSIENT RESISTANCE
Ic (A)
COLLECTOR CURRENT
Rm“) ("C/W)
SWITCHING TIME - RG
COMMON EMITTER
VCC = 300V
VGE = i 15V
IC = 50A
Tc = 25°C
3 5 10 30 50 100 300
GATE RESISTANCE RG (Q)
Rth(t) - tw
Tc=25°C
10-2 IO-l 1 10
PULSE WIDTH tw (s)
REVERSE BIAS SOA
Tj§125°C
VGE= i 15V
Rg=519
100 200 300 400 500 600 700
COLLECTOR-EMITTER VOLTAGE VCE (V)
1997-03-03 4/4
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