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MG30V2YS40
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG30V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT
MG30V2YS40 High Power Switching Applications
Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode High speed : tf = 1.5µs (Max.) (IC = 30A) trr = 0.3µs (Max.) (IF = 30A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C) ― 3 / 3
Weight: 202g (Typ.)
Unit: mm
000707EAA2
