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MG30J6ES50
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG30J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT
MG30J6ES50 High Power Switching Applications
Motor Control Applications The electrodes are isolated from case. High input impedance. 6 IGBTs built into 1 package. Enhancement-mode. High speed : tf = 0.36µs (Max.) (IC = 30A) trr = 0.15µs (Max.) (IF = 30A) Low saturation voltage
: VCE (sat) = 2.70V (Max.) (IC=30A)
Equivalent Circuit Weight: 225g
Unit: mm
000707EAA2
