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MG300Q1US51
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT
MG300Q1US51 High Power Switching Applications
Motor Control Applications High input impedance High speed : tf = 0.3µs (Max.) @Inductive load Low saturation voltage
: VCE (sat) = 3.6V (Max.) Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C) Unit: mm
Weight: 465g
