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Partno	Mfg	Dc	Qty	Available	Descript
MG300J1US51	TOSHIBA	N/a	5	avai	GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications

MG300J1US51 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications
The electrodes are isolated from case.
High input impedance
Includes a comple ..
MG300J2YS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications
The electrodes are isolated from case.
High input impedance
Includes a complet ..
MG300Q1US11 ,INSULATED GATE BIPOLAR TRANSISTORFeatures. High input impedance. High speed: tf = 1.0ps (Max.) trr = 0.5ps (Max.). Low saturation vo ..
MG300Q1US41 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications
High input impedance
High speed : t = 0.5µs (Max.) ft = 0.5µs (Max.) rr
Low s ..
MG300Q1US51 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications
High input impedance
High speed : t = 0.3µs (Max.) f @Inductive load
Low sa ..
MG300Q2YS40 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)TOSHIBA MG300Q2YS40Mf'l'l'lltnnn9YCdi,n0 High Input Impedance EQUIVALENT CIRCUITHigh Speedtf= 0.5ps ..
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MG300J1US51
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG300J1US51 TOSHIBA GTR Module Silicon N Channel IGBT
MG300J1US51
High Power Switching Applications
Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode High speed : tf = 0.30µs (Max.) (IC = 300A)
trr = 0.15µs (Max.) (IF = 300A) Low saturation voltage
: VCE (sat) = 2.70V (Max.) (IC = 300A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C) ―
Weight: 465g (Typ.)
Unit: mm
000707EAA2

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