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MG200Q1US51TOSHIBAN/a6avaiGTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications


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MG200Q1US51
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT
MG200Q1US51

High Power Switching Applications
Motor Control Applications High input impedance High speed : tf = 0.3µs (Max.)
@Inductive load Low saturation voltage
: VCE (sat) = 3.6V (Max.) Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit

Maximum Ratings (Ta = 25°C)

Weight: 465g
Unit: mm
000707EAA2
ic,good price


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