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MG200J2YS50
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG200J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT
MG200J2YS50 High Power Switching Applications
Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode High Speed : tf = 0.30µs (Max) (IC = 200A)
trr = 0.15µs (Max) (IF = 200A) Low saturation voltage
: VCE (sat) = 2.70V (Max) (IC = 200A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C) ― 3 / 3
Unit: mm
000707EAA2
