MG15Q6ES51 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71 * 0.8 or16.0 d: 0.5 60.96 d: 0.5 0’9_ lla |1:94..nr. _ .b' .b.6,a+n,5.-F.iiFiLir1i1_ ..
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MG15Q6ES51
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG15Q6ES51
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
hhltiiM5QtilES51l
HIGH POWER SWITCHING APPLICATIONS Unit in mm
MOTOR CONTROL APPLICATIONS
71 1 0.8 Q.
16.0 A 0.5 ' 60.96 1 0.5 0’9
_ #11524 1 ths . J' 6.8 S: 0.5 A-
o The Electrodes are Isolated from Case. In a - ll a -- V" W” l '
w. --r1 * m.
o High Input Impedance. 333?; -ii) - - fl
o. a o. 1 - oi
o 6 IGBTs Built Into 1 Packa e. 3 17 N N 1 "
g u .. I TEE .... 1919.121 l?
3 ill t fl 5 I _
l ‘L 11.43 A 0.5
16.0 1 0.5 57.151 0.5
I 93.0 1 0.5
107.2 t 0.8
1.15103“ .0:O.3
'r-ri,, 't mmulnmn J,
3 g g 105.0105 , g
g g 41 g
S g' g ts'
EQUIVALENT CIRCUIT
0P+ JEDEC -
EIAJ -
TOSHIBA 2-108E1A
Io-t so-gt so-t
Weight : 185g
20 o U
60 0 V
10cy--oW
so-st 'rcs-st 11 cy-at
4 - 8o-- 12 o-
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1999-03-04 1/7
TOSHIBA MG15Q6ES51
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES :20 V
DC 25/ 15
25°C/ 80°C
Collector Current ( ICP ) A
ms (25°C/80°C) 50/ 30
DC IF 15
Forward Current 1 ms IFM 30 A
Collector Power Dissipation (Tc = 25°C) PC 145 W
Junction Temperature Tj 150 T
Storage Temperature Range Tstg -40--125 T
Isolation Voltage V1501 2500 (AC 1 minute) V
Screw Torque - 6 Nun
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i20 V, VCE = 0 - - i500 nA
Collector Cut-off Current ICES VCE = 1200 V, VGE = 0 - - 0.5 mA
Gate-Emitter Cut-off Voltage VGE (off) IC = 15 mA, VCE = 5V - 6.0 - V
Collector-Emitter Saturation V 10 = 15 A, Tj = 25°C - 2.8 3.2 V
Voltage CE (sat) VGE = 15 V Tj = 125°C - 3.1 3.7
. VCE=10V,VGE=0,
Input Capacitance Cies f g 1 MHz G - 1850 - pF
Rise Time tr VCC = 600V - 0.07 0.15
Switching Turn-on Time ton IC = 15A, VGE = i15V - 0.15 0.30
Time Fall Time tf RG = 82 n, Tj = 125°C - 0.07 0.10 #S
Turn-off Time toff (Note 1) - 0.60 0.90
Forward Voltage VF IF = 15A, VGE = 0 - 2.0 2.8 V
. IF=15A,VGE=-10V,
Reverse Recovery Time trr di/dt = 200A//s - 0.10 0.25 /zs
. Transistor Stage - - 0.86 o
Thermal Resistance Rth (j-e) Diode Stage - - 1.5 C/W
1999-03-04 2/7
TOSHIBA MG15Q6ES51
(Note 1) Switching Time Test Circuit & Timing Chart
1999-03-04 3/7
TOSHIBA
MG15Q6ES51
Ic - VCE
A COMMON i
s, EMITTER 5V
S? Tc = 25°C /12V 10V
E 20 I
a 20V //
8 10 y
8 VGE = 8ir-
0 2 4 6 8 10
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Tc = 25°C
COLLECTOR—EMITTER VOLTAGE VCE
O 4 8 12 16 20
GATE_EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON
EMITTER
To = -40''C
COLLECTOR-EMITTER VOLTAGE VCE (V)
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT 10 (A)
IC - VCE
COMMON
EMITTER 18 V
Tc = 125°C
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Tc = 125°C
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
IC - VCE
30 I 1 I
COMMON ‘4°°(I’//25 C 4,
EMITTER
VCE = 5 v
/" Te = 125°C
0 4/27
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
1999-03-04 4/7
TOSHIBA
SWITCHING TIME (/18)
SWITCHING LOSS (mJ)
SWITCHING TIME - IC
COMMON EMITTER
Vcc = 600 V
VGE = i 15 V
RG = 82 n
- .' Te = 25°C
--. :Te= 125°C
10 100
COLLECTOR-CURRENT 10 (A)
SWITCHING LOSS - IC
COMMON EMITTER
VCC = 600 V
VGE = i 15 V
RG = 82 Q
: Te = 125°C
10 100
COLLECTOR-CURRENT IC (A)
SWITCHING TIME (/15)
SWITCHING LOSS (mJ)
MG15Q6ES51
SWITCHING TIME - RG
COMMON EMITTER
VCC = 600 V
VGE = i 15 V
IC = 15A
- .' Te = 25°C
--- :Te= 125°C
100 1000
GATE RESISTANCE RG (Q)
SWITCHING LOSS - RG
COMMON EMITTER
Vcc = 600 V
VGE = i 15 V
IC = 15A
- : Te = 25°C
- ..Te= 125°C
‘10 100 1000
GATE RESISTANCE RG (Q)
1999-03-04 5/7
TOSHIBA MG15Q6ES51
C - VCE VCE, VGE - QG
3000 9
A 1000 _ ti,
Cis a 600 tr
Pp 2 Id
Q 400 g
E; 100 E: g
E COMMON EMITTER ii E
g VGE = 0V 3': 200 ii
f = 1 MHz t; ,
Te = 25°C 3 U
10 o o 0
1 10 100 1000 o 0 40 80 120 160
COLLECTOR-EMITTER VOLTAGE VCE (V) CHARGE Q0, (nC)
IF - VF k" trr, Irr, Edsw - IF
30 2 10
1 /) e,
s. .-. ,1
3 / a E g
F 20 3f: t 1
a / a D ~o
a a o M
ttt [a hm UI
D 2 r, "
Q -. 31 O
a H a A
E 10 'ii g ii 0.1
t, 12|5 CA t E t COMMON CATHODE
8, Tc = 25°C g E g VCC = 600 v
COMMON CATHODE ttd E 0: VGE = -10 v Tc = 25''C
0 -40oC VGE=0V 'iitiit, di/dt=200A//es ---Tc=125''C
x 0.01
o 1 2 3 l 5 'i'; g E 0 10 20
FORWARD VOLTAGE VF (V) M Eh ttd
FORWARD CURRENT IF (A)
SHORT CIRCUIT SOA
Rth(t) - tw
Tc = 25°C
DIODE STAGE
TRANSISTER STAGE
VCC = 900 V
tw = 10 [us
VGE = i15V
Tj = 125°C
TRANSIENT THERMAL RESISTANCE
Rth(t) (°C/W)
COLLECTOR CURRENT 1C (A)
0.001 0.01 0.1 l 10 0 200 400 600 800 1000 1200 1400
PULSE WIDTH tw (s) C0LLECT0RaMITTER VOLTAGE VCE (V)
1999-03-04 6/7
TOSHIBA
COLLECTOR CURRENT 10 (A)
REVERSE BIAS SOA
Tis 125°C
VGE = i15V
R0, = 829.
200 400 600 800 1000 1200 1400
COLLECTOR-EMITTER VOLTAGE VCE (V)
MG15Q6ES51
1999-03-04 7/7
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