MG15Q6ES50A ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71+0.860'96+0;5,16.0 1 0.5w,1b.Z4iU.bO The Electrodes are Isolated from Case. comm "ll- ..
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MG15Q6ES50A
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG15Q6ESSOA
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MtiiM5Q6lliiS50A
HIGH POWER SWITCHING APPLICATIONS Unit in mm
MOTOR CONTROL APPLICATIONS
o The Electrodes are Isolated from Case.
0 High Input Impedance
42.0': 0.5
45.0 2 0.8
41.91 1 0.5
32.0 :i: 0.5
o 6 IGBTs Built Into 1 Package. 15.5 05.
11.43:o.5
1.15:0.3x1 .0103
107.2 k 0.8
e. g‘gi L'-10sp/to-.s lg.
‘3 i. i) £4}
EQUIVALENT CIRCUIT to',- Gl _
OP-F JEDEC -
EIAJ -
Io-t 5o-st so-t TOSHIBA 2-108E2A
Weight : 185g
20 O U
60 O V
10 cr-our
'so-t 7t:r-sl( 11 cy-st
4o-. 8ty-. 12 o-.
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1998-06-10 1/7
TOSHIBA MG15Q6ES50A
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES -k20 V
DC 25 / 15 A
2 CF /8 C)
Collector Current ( 51:1) 0 C)
lms (25°C/80°C) 50/30 A
DC IF 15 A
Forward Current lms IFM 30 A
Collector Power Dissipation
(Tc=25°C) PC 145 W
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg -40--125 "C
. 2500
Isolation Voltage V1301 (AC 1 minute) V
Screw Torque - 6 Nun
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE= i20V, VCE=0 - - i500 nA
Collector Cut-Off Current ICES VCE=1200V, VGE=0 - - 0.5 mA
Gate-Emitter Cut-Off Voltage VGE (off) 1C = 15mA, VCE =5V 3.0 - 6.0 V
Collector-Emitter Saturation V 10 = 15A, Tj = 25°C - 2.8 3.2
Voltage CE (sat) VGE=15V Tj=125°C - 3.1 3.7
Input Capacitance Cies VCE = 10V, VGE = 0, f = 1MHz - 1850 - pF
Rise Time tr VCC=600V - 0.07 0.15
Switching Turn-On Time ton IC = 15A, VGE = -f_- 15V - 0.15 0.30
Time Fall Time tf Rg=820, Tj=125°C - 0.07 0.10 ps
Turn-Off Time toff (Note 1) - 0.60 0.90
Forward Voltage VF IF=15A, VGE=0 - 2.0 2.8 V
. IF-- 15A, VGE = - 10V
Reverse Recovery Time trr di/dt=200A/ps - 0.10 0.25 #s
. Transistor Stage - - 0.86 o
Thermal Resistance Rth (i-e) Diode Stage - - 1.5 C/W
1998-06-10 2/7
TOSHIBA MG15Q6ESSOA
(Note 1) Switching Time Test Circuit & Timing Chart
1998-06-10 3/7
TOSHIBA
MG15Q6ESSOA
IC - VCE
30 COMMON
EMITTER
Tc=25°C 15 10
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT 10 (A)
VGE = 7V
VCE - VGE
COMMON
EMITTER
Tc = 25°C
COLLECTOREMITTER VOLTAGE VCE (V)
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON
EMITTER
Tc = - 40''C
COLLECTOEEMITTER VOLTAGE VCE (V)
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOREMITTER VOLTAGE VCE (V) COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT 1C (A)
IC - VCE
COMMON
EMITTER
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Tc = 125°C
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
30 IC - VGE
-40 l/gy/Tcrnzsm
COMMON
EMITTER
0 / VCE = 5V
0 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE VGE (V)
1998-06-10 4/7
TOSHIBA MG15Q6ESSOA
SWITCHING TIME - IC SWITCHING TIME - RG
E E 0.1
COMMON EMITTER COMMON EMITTER
Vcc=600V Vcc=600V
VGE = i 15V Tc=25°C VGE = i15V Tc = 25°C
RG=82Q --- Tc=125°C Ic=15A --- Tc=125°C
1 10 100 10 100 1000
COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Q)
SWITCHING LOSS - IC SWITCHING LOSS - RG
[i' bi)
t t COMMON EMITTER
VCC = 600V
COMMON EMITTER
Vcc=600V q
VGE= i15V Tc=25 C
Rg=82Q - - - Tc=125°C
10 100
COLLECTOR CURRENT IC (A)
VGE= i15V
IC=15A
Tc=25°C
- - - - Te-- 125°C
100 1000
GATE RESISTANCE RG (Q)
1998-06-10 5/7
TOSHIBA
FORWARD CURRENT IF (A) CAPACITANCE C (pF)
TRANSIENT THERMAL RESISTANCE
Rth (t) (°C/ W)
COMMON
EMITTER
VGE = 0V
f-- lMHz
Tc = 25°C
1 1 0 100 l 000
COLLECTOR-EMITTER VOLTAGE VCE (V)
IF - VF
30 / ,
125°C /
- Tc = 25°C I y
COMMON CATHODE
0 - 40°C VGE = 0V
0 1 2 3 l 5
FORWARD VOLTAGE VF (V)
Rth (t) - tw
Te = 25°C
DIODE STAGE
TRANSISTOR STAGE
0.001 0.01 0.1 1 10
PULSE WIDTH tw (s)
COLLECTOR-EMITTER VOLTAGE VCE (V)
In. (XIOA)
REVERSE RECOVERY TIME 1:" (/18)
PEAK REVERSE RECOVERY CURRENT
REVERSE RECOVERY LOSS Edsw (mJ)
COLLECTOR CURRENT [C (A)
MG15Q6ESSOA
VCE, VGE - QG
40 80 120 160
CHARGE Qt; (nC)
trr, Irr, Edsw - IF
COMMON CATHODE
VCC = 600V
VGE= -10V Tc=25°C
dildt=200Alys -- - Tc=125''C
FORWARD CURRENT IF (A)
SHORT CIRCUIT SOA
Vcc=900V
tw= lOps
VGE = i 15V
Tj=125°C
200 400 600 800 1000 1200
C0LLECT0RaMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
1998-06-10 6/7
TOSHIBA
COLLECTOR CURRENT 10 (A)
REVERSE BIAS SOA
Trs 125°C
VCE-- :15v
RG--82n
200 400 600 800 1000 1200 1400
COLLECTOR-EMITTER VOLTAGE VCE (V)
MG15Q6ESSOA
1998-06-10 7/7
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