MG15Q6ES42 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS.r------"--'-'?--'--------------,O The Electrodes are Isolated from Case.14IU..5’I A TG ..
MG15Q6ES50A ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71+0.860'96+0;5,16.0 1 0.5w,1b.Z4iU.bO The Electrodes are Isolated from Case. comm "ll- ..
MG15Q6ES51 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71 * 0.8 or16.0 d: 0.5 60.96 d: 0.5 0’9_ lla |1:94..nr. _ .b' .b.6,a+n,5.-F.iiFiLir1i1_ ..
MG200H1AL2 ,(DISCRETE/OPTO)---TOSHIBA .fIyirSCREyi'E/0PT01 =10 oE:lllmyri'ii!siuo P1iiiyi'n 3 Ill.9Q97250 TOSHIBA orscmzrE/tvr ..
MG200H1FL1A ,V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module---TOSHIBA .fIyirSCREyi'E/0PT01 =10 oE:lllmyri'ii!siuo P1iiiyi'n 3 Ill.9Q97250 TOSHIBA orscmzrE/tvr ..
MG200J2YS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The electrodes are isolated from case. High input impedance Includes a complet ..
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MG15Q6ES42
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG15Q6ES42
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MGM5QtilliiS42
HIGH POWER SWITCHING APPLICATIONS. Unit in mm
MOTOR CONTROL APPLICATIONS.
o The Electrodes are Isolated from Case.
10i0.3
- II II N
1bh2110.2 d
"H-H-- f4
0 6 IGBTs are Built Into 1 Package.
0 Enhancement-Mode
44.7i0.6
0 Low Saturation Voltage
VCE (sat) =4.0V (Max.)
4-¢2.65 DEPTHSD ji
12-FAST-oN-TAB #110
2010.3 215:0. 21.5:03 5-FAST-0N-TAB #250
'T' iFir iFir In-,-,
g 42.7:th.6
0 High Speed : tf--0.5ps(Max.)
trr= 0.5ps (Max.)
J24.5:i:l .
16.51:!
JEDEC -
EIAJ -
TOSHIBA 2-93A3A
Weight : 220g
EQUIVALENT CIRCUIT
GU GV GW
(BU) (BV) (BW)
EU C O U
EV C) 0 V
EW o---' W
GX GY GZ
(BX) (BY) (BZ)
oEX o-. EY cy- EZ Cy-
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-03-03 1/5
TOSHIBA MG15Q6ES42
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES i- 20 V
Collector Current DC IC 15 A
lms ICP 30
Forward Current DC IF 15 A
lms IFM 30
Collector Power Dissipation PC 125 W
Junction Temperature Tj 150 T
Storage Temperature Range Tstg -40--125 ''C
Isolation Voltage V1501 2500 (AC 1 minute) V
Screw Torque - 3 N . m
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i 20V, VCE = 0 - - i- 10 ,uA
Collector Cut-off Current ICES VCE = 1200V, VGE = 0 - - 1.0 mA
Gate-Emitter
Cut-off Voltage VGE(OFF) IC - 15mA, VCE - 5V 3.0 - 6.0 V
Collector-Emi;
Saturation Voltage VCE(sat) IC - 15A, VGE - 15V - 3.0 4.0 V
Input Capacitance Cies VCE = 10V, VGE = 0, f = lMHz - 1800 - pF
Rise Time tr - 0.3 0.6
. . . Turn-on Time t 100n O - 0.4 0.8
Switehin Time on 15V C) W I M' ,us
g Fall Time tf 0 rL- - 0.25 0.5
. - 15V
Turn-off Time toff A 600V - 0.8 1.5
Forward Voltage VF IF = 15A, VGE = 0 - 1.8 2.5 V
. IF = 15A, VGE = - 10V
Reverse Recovery Time trr di / dt= 100A HIS - 0.2 0.5 ps
T . t - - 1.0
Thermal Resistance Rth (j-e) rams or T /W
Diode - - 1.8
1997-03-03 2/5
TOSHIBA MG15Q6ES42
IC - VCE VCE - VGE
COMMON 20//15 't G COMMON
"iii' EMITTER y EMITTER
E Tc=25°C // 10 Js------ g Te---40"C
E 20 I ,/ 's, Ec=125w g
z 's .4
E / / a "s,, >
g // -
la' // 'ji,
8 VGE=TV- a
o 2 4 6 8 o 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE VCE - VGE
COMMON
EMITTER
Te = 25°C
COMMON
EMITTER
Tc = 125°C
COLLECTOR-EMITTER VOLTAGE VCE(V)
COLLECTOR-EMITI‘ER VOLTAGE VCE (V)
0 4 8 12 16 20 o 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VGE (V)
IC - VGE VCE,VGE - Q0.
III, J' Lt COMMON A
_ I / 8 EMITTER tt
< f > a
V I I RL=400 VCE =0v c:
S W g Tc=25°C >
20 p <1 M
td a O
g E ‘55
s 10 E E
12 ' E
g 5 J, COMMON 'li k]
8 / I 25 EMITTER 8 E
wt') Tc-- - 40°C VCE =5V 8 U
o C) I I U
o 4 8 12 16 20 0 20 40 60 80 100 120 143
GATE-EMITTER VOLTAGE VGE (V) CHARGE QG (nC)
1997-03-03 3/5
TOSHIBA
MG15Q6ES42
SWITCHING TIME - IC
g3 COMMON EMITTER
'fi' 0.1 Vcc=600v
VGE=i15V
0 Rc,=1000
Tc=25°C
0 4 8 12 16
COLLECTOR CURRENT IC (A)
IF - VF
30 I I I
I I I COMMON
k" I / f CATHODE
:1. II f I VGE--OV
E I I I
E / / f
3g 10 125 "25 Tc=_40°C
0 0.8 1.6 2.4 3.2 4.0
FORWARD VOLTAGE " (V)
COMMON
EMITTER
VGE = 0V
f-- IMHz
To -- 25°C
CAPACITANCE C (p?)
0.03 0.1 0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
SWITCHING TIME -RG
3 COMMON EMITTER
tn VCC=600V
VGE=i15V
Ic=15A
Tc=25°C
3 10 30 100 300 1000 3000
GATE RESISTANCE RG (n)
k" trr, Irr - IF
COMMON
CATHODE
di/dt=100A//s
VGE = - 10V
Tc = 25'C
REVERSE RECOVERY TIME tr, (XlOns)
PEAK REVERSE RECOVERY CURRENT
0 5 10 15
FORWARD CURRENT IF (A)
Rth (t) - tw
Tc = 25''C
DIODE STAGE
TRANSISTOR STAGE
TRANSIENT THERMAL RESISTANCE
0%” 10-2 IO-l 1 10
PULSE WIDTH tw (s)
1997-03-03 4/5
TOSHIBA
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
Ic MAX. lms X 's,
(coNTmUOUs)h,
lllllllll \
I IIIIIIII ,
X SINGLE
NONREPETITIVI\ 'N
PULSE - ls
Tc=25"C N DC OPERATION .
CURVES MUST BE
DERATED LINEALY
WITH INCREASE IN
TEMPERATURE.
1 3 10 30 100 300 1000 3000
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT 10 (A)
MG15Q6ES42
REVERSE BIAS SOA
Trs 126°C
VGE= i15V
Rg=100S2
200 400 600 800 1000 1200 1400
COLLECTOR-EMITTER VOLTAGE VCE (V)
1997-03-03 5/5
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