MG150Q2YS51 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsMG150Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 High Power Switching
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MG150Q2YS51
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG150Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT
MG150Q2YS51 High Power Switching Applications
Motor Control Applications High input impedance High speed : tf = 0.3µs (Max)
@Inductive Load Low saturation voltage
: VCE (sat) = 3.6V (Max) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C) ―
Weight: 430g
Unit: mm
