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MG150Q2YS40
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG150Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT
MG150Q2YS40 High Power Switching applications
Motor Control Applications High input impedance High speed : tf = 0.5µs (max)
trr = 0.5µs (max) Low saturation voltage
: VCE (sat) = 4.0V (max) Enhancement-mode Includes a complate half bridge in one package. The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C) ― 3 / 3
Unit: mm
Weight: 430g (typ.)
