MG150J1JS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The electrodes are isolated from case. High input impedance Includes a comple ..
MG150J1ZS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The electrodes are isolated from case. High input impedance Includes a complete ..
MG150J2YS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsMG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mmHigh Power Switching
MG150J7KS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsElectrical Characteristics (Ta = 25°C)Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
MG150J7KS60 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter and brake power circuit into a single package The electrod ..
MG150Q2YS40 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications High input impedance High speed : t = 0.5µs (max) f t = 0.5µs (max) rrLow satu ..
MIC6211-YM5 , IttyBitty Operational Amplifier
MIC6270YM5 , IttyBitty Comparator
MIC6270YM5 , IttyBitty Comparator
MIC6315-26D2UY , Open-Drain μP Reset Circuit
MIC6315-26D3U , Open-Drain μP Reset Circuit
MIC6315-26D3UY , Open-Drain μP Reset Circuit
MG150J1JS50
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG150J1JS50 TOSHIBA GTR Module Silicon N Channel IGBT
MG150J1JS50 High Power Switching Applications
Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode High speed : tf = 0.30 µs (max) (IC = 150 A)
trr = 0.15 µs (max) (IF = 150 A) Low saturation voltage
: VCE (sat) = 2.70 V (max) (IC = 150 A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C) ― 3/3
Unit: mm E2
E1/C2
E1 G1
