MG10Q6ES50A ,N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71+0.860'96+0;5,16.0 1 0.5w,1b.Z4iU.bO The Electrodes are Isolated from Case. comm "ll- ..
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MG10Q6ES50A
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG10Q6ESSOA
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MtiiM0Q6lliiS50A
HIGH POWER SWITCHING APPLICATIONS Unit in mm
MOTOR CONTROL APPLICATIONS
o The Electrodes are Isolated from Case.
0 High Input Impedance.
0 6 IGBTs Built Into 1 Package.
42.0': 0.5
45.0 2 0.8
41.91 1 0.5
32.0 :i: 0.5
,- 15.51051 l
EQUIVALENT CIRCUIT
Io-st so-st so-t
20 ou ,
60 0V i
10o--ow
JEDEC -
so-t 7o-4( 11 o-t
EIAJ -
4Cy-. 8 Cy- 12 Cr- o N TOSHIBA 2-108E2A
Weight : 185g
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1998-06-10 1/7
TOSHIBA MG10Q6ES50A
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES -k20 V
DC 15/ 10 A
2 CF /8 C)
Collector Current ( 51:1) 0 C)
lms (25°C/80°C) 30/20 A
DC IF 10 A
Forward Current lms IFM 20 A
Collector Power Dissipation
(Tc=25°C) PC 80 W
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg -40--125 "C
. 2500
Isolation Voltage V1301 (AC 1 minute) V
Screw Torque - 6 Nun
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE= i20V, VCE=0 - - i500 nA
Collector Cut-Off Current ICES VCE=1200V, VGE=0 - - 0.5 mA
Gate-Emitter Cut-Off Voltage VGE (off) IC=10mA, VCE=5V 3.0 - 6.0 V
Collector-Emir Saturation V IC = 10A, Tj = 25°C - 2.8 3.2
Voltage CE (sat) VGE=15V Tj=125°C - 3.1 3.7
Input Capacitance Cies VCE = 10V, VGE = 0, f = lMHz - 1200 - pF
Rise Time tr Vcc=600V - 0.07 0.15
Switching Turn-On Time ton {9:10‘115‘, - 0.15 0.30
. . GE = - #5
Time Fall Time tf Rg=1200 - 0.07 0.10
Turn-Off Time toff Tj=125°C (Note 1) - 0.60 0.90
Forward Voltage VF IF-- 10A, VGE =0 - 2.2 3.0 V
. IF-- 10A, VGE = - 10V,
Reverse Recovery Time trr di / dt=150 A /ps - 0.10 0.25 gs
. Transistor - - 1.52 o
Thermal Resistance Rth (j-e) Diode - - 2.0 C/W
1998-06-10 2/7
TOSHIBA MG10Q6ESSOA
(Note 1) Switching Time Test Circuit & Timing Chart
1998-06-10 3/7
TOSHIBA
MG10Q6ESSOA
10 (A)
COLLECTOR CURRENT
COLLECTOR—EMITTER VOLTAGE VCE
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC - VCE
VGE = TV
COMMON EMITTER
Tc = 25°C
2 4 6 8
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON EMITTER
Tc = 25°C
4 8 12 16
GATE_EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON EMITTER
Tc = - 40''C
4 8 12 16
GATE-EMITTER VOLTAGE VGE (V)
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT 10 (A)
IC - VCE
VGE=7V
COMMON EMITTER
Tc = 125°C
2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON EMITTER
Te = 125°C
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
IC - VGE
- 40''C
Tc = 125°C
COMMON EMITTER
VCE = 5V
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
1998-06-10 4/7
TOSHIBA MG10Q6ESSOA
SWITCHING TIME - IC SWITCHING TIME - RG
sts'.. EL
E i.5,
COMMON EMITTER COMMON EMITTER
VCC = 600V Vcc = 600V
VGE=i15V VGE=i15V
RG = 1200 IC = 10A
- : Tc=25°C - : Tc=25°C
- :Tc=125°C --- -.Tc--125''C
0.001 .
1 10 100 10 100 1000
COLLECTOR-CURRENT IC (A) GATE RESISTANCE RG (Q)
SWITCHING LOSS - IC SWITCHING LOSS - RG
.J (l)
© COMMON EMITTER
a VCC = 600V
E VGE = i 15V
8 IC = 10A .
- - .' Tc=25 C
t --- :Tc=125°C
0.1 '10 100 1000
GATE RESISTANCE RG (Q)
COMMON EMITTER
Vcc=600V
VGE = i 15V
RG-- 1200
- : Tc=25'C
- - - : Tc=125°C
l 10 100
COLLECTOR-CURRENT IC (A)
1998-06-10 5/7
TOSHIBA
CAPACITANCE C (pF)
IF (A)
FORWARD CURRENT
THERMAL TRANSIENT RESISTANCE
Rm“) (°C/W)
COMMON EMITTER
f=GHIIHz
Te = 25°C
0.1 1 10
100 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
Tc = 25°C
COMMON CATHODE
VGE = 0V
0 1 2 3 4 5
FORWARD VOLTAGE " (V)
Rth (t) - tw
Tc=25°C
'0.001 0.01 0.1 1 10
PULSE WIDTH tw (s)
COLLECTOREMITTER VOLTAGE
T I" (A)
REVERSE RECOVERY LOSS Edsw (mJ)
REVERSE RECOVERY TIME
PEAK REVERSE RECOVERY CURR
10 (A)
COLLECTOR CURRENT
MG10Q6ESSOA
VCE, VGE - QG
VCE=0V
COMMON EMITTER
RL = 600
Tc = 25''C
20 40 60 80 100
CHARGE QG (nC)
trr, Irr, Edsw - IF
COMMON CATHODE
Vcc=600V
VGE = - 10V
--- .' Tc=125°C di/dt=150A//s
2 4 6 8 10
FORWARD CURRENT IF (A)
SHORT CIRCUIT SOA
Vcc=900V
tw=10,us
VGE = i 15V
Tj=125°C
200 400 600 800 1000 1200 1400
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
1998-06-10 6/7
TOSHIBA
MG10Q6ESSOA
COLLECTOR CURRENT 10 (A)
REVERSE BIAS SOA
Trs 125°C
VGE= :15v
1 Rg=12052
200 400 600 800 1000 1200 1400
COLLECTOR-EMITTER VOLTAGE VCE (V)
1998-06-10 7/7
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