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MG100Q2YS65HToshibaN/a6avaiIGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications


MG100Q2YS65H ,IGBT Module Silicon N Channel IGBT High Power & High Speed Switching ApplicationsApplications  High input impedance  Enhancement-mode  The electrodes are isolated from ca ..
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MG100Q2YS65H
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT
MG100Q2YS65H

High Power & High Speed Switching Applications High input impedance Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit

Maximum Ratings (Ta �
�� � 25°C)
Unit: mm
Weight: 255 g (typ.)
G1 E1/C2
E2
G2 C1
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