MD1803DFX ,High voltage npn power transistor for standard definition CRT displayElectrical characteristics Symbol Parameter Test conditions Min. Typ. Max. UnitV = 1500VCollector c ..
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MD1803DFX
High voltage npn power transistor for standard definition CRT display
September 2006 Rev 6 1/10
MD1803DFXHigh voltage NPN Power transistor for standard definition CRT
display
Features State-of-the-art technology: Diffused collector “enhanced generation” More stable performance versus operating
temperature variation Low base drive requirement Tighter hFE range at operating collector current Fully insulated power package U.L. compliant Integrated free wheeling diode In compliance with the 2002/93/EC european
directive
Applications Horizontal deflection output for TV
DescriptionThe MD1803DFX is manufactured using Diffused
Collector in Planar Technology adopting new and
enhanced high voltage structure. The new MD
product series show improved silicon efficiency
bringing updated performance to the Horizontal
Deflection stage.
Order codes
Internal schematic diagram
Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum rating
Table 2. Thermal data
MD1803DFX Electrical characteristics
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2 Electrical characteristics(TCASE = 25°C; unless otherwise specified)
Table 3. Electrical characteristics Pulsed duration = 300 µs, duty cycle ≤ 1.5%.
Electrical characteristics
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2.1 Electrical characteristics (curve)
Figure 1. Safe operating area Figure 2. Derating curve
Figure 3. Output characteristics Figure 4. Reverse biased SOA
Figure 5. DC current gain Figure 6. DC current gain
MD1803DFX Electrical characteristics
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Figure 7. Collector-emitter saturation voltage Figure 8. Base-emitter saturation voltage
Figure 9. Power losses Figure 10. Inductive load switching time
Electrical characteristics
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2.2 Test circuit
Figure 11. Power losses and inductive load switching test circuit
Figure 12. Reverse biased safe operating area test circuit
