MCR8SD ,Sensitive Gate Silicon Controlled RectifierMAXIMUM RATINGS (T = 25°C unless otherwise noted)J1Rating Symbol Value Unit 23(1)Peak Repetitive Of ..
MCR8SM ,Sensitive Gate Silicon Controlled RectifierDesigned primarily for half-wave ac control applications, such asmotor controls, heating controls, ..
MCR8SM ,Sensitive Gate Silicon Controlled Rectifier2MCR8SD, MCR8SM, MCR8SNVoltage Current Characteristic of SCR+ CurrentAnode +VSymbol ParameterTMV Pe ..
MCR8SN ,Sensitive Gate Silicon Controlled RectifierELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MCR908JK3ECDWE , The following revision history table summarizes changes contained in this document. For your convenience, the page number designators have been linked to the appropriate location.
MCR908JK3ECDWE , The following revision history table summarizes changes contained in this document. For your convenience, the page number designators have been linked to the appropriate location.
MIC2778-2BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC2779H-1BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC2779L-2BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC2779L-2BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC2779L-2BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC280 , Precision IttyBitty Thermal Supervisor
MCR8SD-MCR8SM-MCR8SN
Sensitive Gate Silicon Controlled Rectifier
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Preferred Device---
Reverse Blocking ThyristorsDesigned primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed. Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits Blocking Voltage to 800 Volts On–State Current Rating of 8 Amperes RMS at 80°C High Surge Current Capability — 80 Amperes Rugged, Economical TO220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design Immunity to dv/dt — 5 V/μsec Minimum at 110°C Device Marking: Logo, Device Type, e.g., MCRSD, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
