MCR8DCMT4 ,Silicon Controlled RectifiersELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristics Symbol Min Typ Max Uni ..
MCR8DCN ,Silicon Controlled RectifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit4YWWPeak Repetitive Off−S ..
MCR8DSM ,Silicon Controlled RectifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted)J4Rating Symbol Value UnitYWWDPAKPeak Repetitive O ..
MCR8DSMT4 ,Sensitive Gate Silicon Controlled RectifiersELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristics Symbol Min Typ Max Uni ..
MCR8DSMT4G , Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8DSN ,Sensitive Gate Silicon Controlled Rectifiers3T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) °CP , AVERAGE POWER DISSIPATION (WATTS)(AV)MCR8DSM, M ..
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MCR8DCM-MCR8DCMT4-MCR8DCN
Silicon Controlled Rectifiers
MCR8DCM, MCR8DCN
Preferred DeviceSilicon Controlled Rectifiers
Reverse Blocking ThyristorsDesigned for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features Pb−Free Package is Available Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Available in Surface Mount Lead Form − Case 369C Epoxy Meets UL 94, V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B � 8000 V
Machine Model, C � 400 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected. VDRM, VRRM for all types can be applied on a continuous basis. Ratings apply
for zero or negative gate voltage; positive gate voltage shall not be applied