
MCR72-6 ,Thyristor SCR 400V 100A 3-Pin(3+Tab) TO-220AB BoxMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit(1)Peak Repetitive Off–St ..
MCR72-8 ,Thyristor SCR 600V 100A 3-Pin(3+Tab) TO-220AB BoxTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 2.2 °C/ ..
MCR72-8G , Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8D ,Silicon Controlled Rectifiers Reverse Blocking ThyristorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MCR8D ,Silicon Controlled Rectifiers Reverse Blocking ThyristorsMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
MCR8DCM ,Silicon Controlled Rectifiers2MCR8DCM, MCR8DCNVoltage Current Characteristic of SCR+ CurrentAnode +VSymbol ParameterTMV Peak Rep ..
MIC2776N-BM5 , Micro-Power Low Voltage Supervisor
MIC2776N-BM5 , Micro-Power Low Voltage Supervisor
MIC2778-2BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC2779H-1BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC2779L-2BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC2779L-2BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MCR72-6-MCR72-8
Sensitive Gate Silicon Controlled Rectifier
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Preferred Device---
Reverse Blocking ThyristorsDesigned for industrial and consumer applications such as
temperature, light and speed control; process and remote controls;
warning systems; capacitive discharge circuits and MPU interface. Center Gate Geometry for Uniform Current Density All Diffused and Glass-Passivated Junctions for Parameter
Uniformity and Stability Small, Rugged Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability Low Trigger Currents, 200 μA Maximum for Direct Driving from
Integrated Circuits Device Marking: Logo, Device Type, e.g., MCR72–3, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the