MCR69-2 ,Silicon Controlled RectifiersMaximum ratings applied to the device are individual stress limit values (notORDERING INFORMATIONno ..
MCR69-2 ,Silicon Controlled RectifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitMARKINGPeak Repetitive Of ..
MCR69-3 ,Silicon Controlled RectifiersELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Uni ..
MCR703A ,Silicon Controlled RectifiersELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MCR703A ,Silicon Controlled RectifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JACharacteristic Symbol Value UnitGPeak Repetitiv ..
MCR703AT4 ,Silicon Controlled RectifierFeatures100 − 600 VOLTS• Pb−Free Package is Available• Small SizeG• Passivated Die Surface for Reli ..
MIC2776N-BM5 , Micro-Power Low Voltage Supervisor
MIC2776N-BM5 , Micro-Power Low Voltage Supervisor
MIC2778-2BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC2779H-1BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC2779L-2BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC2779L-2BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MCR69-2-MCR69-3
Silicon Controlled Rectifiers
MCR69-2, MCR69-3
Silicon Controlled Rectifiers
Reverse Blocking ThyristorsDesigned for overvoltage protection in crowbar circuits.
Features Glass-Passivated Junctions for Greater Parameter Stability and
Reliability Center-Gate Geometry for Uniform Current Spreading Enabling
High Discharge Current Small Rugged, Thermowatt Package Constructed for Low Thermal
Resistance and Maximum Power Dissipation and Durability High Capacitor Discharge Current, 750 Amps Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various
duration of an exponentially decaying current waveform, tw is defined as
5 time constants of an exponentially decaying current pulse. Test Conditions: IG = 150 mA, VD = Rated VDRM, ITM = Rated Value, TJ = 125°C.
