MCR265 ,Silicon Controlled RectifiersELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Uni ..
MCR265 ,Silicon Controlled RectifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted)JA KRating Symbol Value Unit(1)Peak Repetitive Off ..
MCR265-10 ,Thyristors**Order this documentSEMICONDUCTOR TECHNICAL DATA by MCR265-2/D*Silicon Controlled Rectifiers. . . ..
MCR265-10 ,ThyristorsMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Peak Repetitive Forwa ..
MCR265-10 ,Thyristors**Order this documentSEMICONDUCTOR TECHNICAL DATA by MCR265-2/D*Silicon Controlled Rectifiers. . . ..
MCR265-6 ,ThyristorsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.9 °C/ ..
MIC2587-2BM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2587R-1BM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2587R-1YM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2587R-1YM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2587R-2BM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2587R-2BM , Single-Channel, Positive High-Voltage Hot Swap Controller
MCR265
Silicon Controlled Rectifiers
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Preferred Device--
Reverse Blocking ThyristorsDesigned for inverse parallel SCR output devices for solid state
relays, welders, battery chargers, motor controls or applications
requiring high surge operation. Photo Glass Passivated Blocking Junctions for High Temperature
Stability, Center Gate for Uniform Parameters 550 Amperes Surge Capability Blocking Voltage to 800 Volts Device Marking: Logo, Device Type, e.g., MCR265–4, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge
conditions. Care must be taken to insure proper heat sinking when the device
is to be used at high sustained currents.
