MCR265-10 ,Thyristors**Order this documentSEMICONDUCTOR TECHNICAL DATA by MCR265-2/D*Silicon Controlled Rectifiers. . . ..
MCR265-10 ,ThyristorsMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Peak Repetitive Forwa ..
MCR265-10 ,Thyristors**Order this documentSEMICONDUCTOR TECHNICAL DATA by MCR265-2/D*Silicon Controlled Rectifiers. . . ..
MCR265-6 ,ThyristorsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.9 °C/ ..
MCR265-8 ,ThyristorsMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Peak Repetitive Forwa ..
MCR68-2 ,Silicon Controlled RectifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit(1)Peak Repetitive Off–St ..
MIC2587R-1BM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2587R-1YM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2587R-1YM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2587R-2BM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2587R-2BM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2588-2BM , Single-Channel, Negative High-Voltage Hot Swap Power Controllers
MCR265-10-MCR265-6-MCR265-8
Thyristors
Silicon Controlled Rectifiers. . . designed for inverse parallel SCR output devices for solid state relays, welders,
battery chargers, motor controls or applications requiring high surge operation. Photo Glass Passivated Blocking Junctions for High Temperature Stability,
Center Gate for Uniform Parameters 550 Amperes Surge Capability Blocking Voltage to 800 Volts
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when
the device is to be used at high sustained currents.
