MCR25M ,Silicon Controlled RectifierELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MCR25N ,Silicon Controlled RectifierMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit4(1)Peak Repetitive Off–S ..
MCR265 ,Silicon Controlled RectifiersELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Uni ..
MCR265 ,Silicon Controlled RectifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted)JA KRating Symbol Value Unit(1)Peak Repetitive Off ..
MCR265-10 ,Thyristors**Order this documentSEMICONDUCTOR TECHNICAL DATA by MCR265-2/D*Silicon Controlled Rectifiers. . . ..
MCR265-10 ,ThyristorsMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Peak Repetitive Forwa ..
MIC2587-1BM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2587-2BM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2587R-1BM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2587R-1YM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2587R-1YM , Single-Channel, Positive High-Voltage Hot Swap Controller
MIC2587R-2BM , Single-Channel, Positive High-Voltage Hot Swap Controller
MCR25D-MCR25M-MCR25N
Silicon Controlled Rectifier
--
Preferred Device--
Reverse Blocking ThyristorsDesigned primarily for half–wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed. Blocking Voltage to 800 Volts On-State Current Rating of 25 Amperes RMS High Surge Current Capability — 300 Amperes Rugged, Economical TO–220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT, and IH Specified for
Ease of Design High Immunity to dv/dt — 100 V/μsec Minimum @ 125°C Device Marking: Logo, Device Type, e.g., MCR25D, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
