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MCR218MOT/ONN/a1000avaiThyristors(Silicon Controlled Rectifiers)


MCR218 ,Thyristors(Silicon Controlled Rectifiers)MAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Peak Repetitive Forwa ..
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MCR218-4 ,ThyristorMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit(1)Peak Repetitive Off–St ..
MCR218-6 ,ThyristorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)JCharacteristic Symbol Min Typ Max Uni ..
MCR22-2 ,Silicon Controlled RectifiersTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 50 °C/W ..
MCR225 ,Silicon Controlled Rectifiers**Order this documentSEMICONDUCTOR TECHNICAL DATA by MCR22-2/D** ** ** **. . . designed and tested ..
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MCR218
Thyristors(Silicon Controlled Rectifiers)
Silicon-Controlled Rectifiers
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed. Glass-Passivated Junctions Blocking Voltage to 800 Volts TO-220 Construction — Low Thermal Resistance, High Heat Dissipation and
Durability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
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