MCR16N ,Silicon Controlled RectifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit4(1)Peak Repetitive Off–S ..
MCR218 ,Thyristors(Silicon Controlled Rectifiers)MAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Peak Repetitive Forwa ..
MCR218-2G , Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR218-4 ,ThyristorMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit(1)Peak Repetitive Off–St ..
MCR218-6 ,ThyristorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)JCharacteristic Symbol Min Typ Max Uni ..
MCR22-2 ,Silicon Controlled RectifiersTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 50 °C/W ..
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MCR16N
Silicon Controlled Rectifiers
Preferred Device--
Reverse Blocking ThyristorsDesigned primarily for half–wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed. Blocking Voltage to 800 Volts On–State Current Rating of 16 Amperes RMS High Surge Current Capability — 160 Amperes Rugged Economical TO–220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT, and IH Specified for
Ease of Design High Immunity to dv/dt — 100 V/μsec Minimum at 125°C Device Marking: Logo, Device Type, e.g., MCR16N, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
