MCR106-2 ,Silicon controlled rectifierTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 3 °C/Wθ ..
MCR106-2. ,Silicon controlled rectifierMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Peak Repetitive Forwa ..
MCR106-6 ,Silicon controlled rectifier
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MCR106-8 ,Silicon controlled rectifier, 4A, 600V**Order this documentSEMICONDUCTOR TECHNICAL DATA by MCR106/D* ** ** **Reverse Blocking Triode Thyr ..
MCR106L-6-T60-K , REVERSE BLOCKING TRIODE THYRISTORS
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MCR106-2-MCR106-2.-MCR106-8
Silicon controlled rectifier
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Reverse Blocking Triode ThyristorsPNPN devices designed for high volume consumer applications such as
temperature, light and speed control; process and remote control, and warning
systems where reliability of operation is important. Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; (cont.)
however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
