MCR102 ,Silicon Controlled Rectifiers**Order this documentSEMICONDUCTOR TECHNICAL DATA by MCR102/D* ** ** *Reverse Blocking Triode Thyri ..
MCR103 ,Silicon Controlled RectifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(2)Peak Repetitive Forwa ..
MCR106-2 ,Silicon controlled rectifierTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 3 °C/Wθ ..
MCR106-2. ,Silicon controlled rectifierMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Peak Repetitive Forwa ..
MCR106-6 ,Silicon controlled rectifier
MCR106-6 ,Silicon controlled rectifier
MIC2551BTS , USB Transceiver
MIC2551BTS , USB Transceiver
MIC2551YML , USB Transceiver
MIC2551YML , USB Transceiver
MIC2551YTS , USB Transceiver
MIC2555-1BML , USB – OTG Transceiver
MCR102-MCR103
Silicon Controlled Rectifiers
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Reverse Blocking Triode ThyristorsAnnular PNPN devices designed for low cost, high volume consumer applications
such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors,
and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA
package which is readily adaptable for use in automatic insertion equipment. Sensitive Gate Trigger Current — 200 μA Maximum Low Reverse and Forward Blocking Current — 100 μA Maximum, TC = 85°C Low Holding Current — 5 mA Maximum Passivated Surface for Reliability and Uniformity
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Temperature reference point for all case temperature is center of flat portion of package. (TC = +85°C unless otherwise noted.) VDRM and VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate
