MCR100-8 ,0.8A SILICON CONTROLLED RECTIFIERSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 75 °C/W ..
MCR100-8G , Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR100JZHJ221 , Thick Film Chip Resistors
MCR102 ,Silicon Controlled Rectifiers**Order this documentSEMICONDUCTOR TECHNICAL DATA by MCR102/D* ** ** *Reverse Blocking Triode Thyri ..
MCR103 ,Silicon Controlled RectifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(2)Peak Repetitive Forwa ..
MCR106-2 ,Silicon controlled rectifierTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 3 °C/Wθ ..
MIC2548-2BM , Programmable Current Limit High-Side Switch Preliminary Information
MIC2548-2BM , Programmable Current Limit High-Side Switch Preliminary Information
MIC2548-2BM , Programmable Current Limit High-Side Switch Preliminary Information
MIC2548-2YM , Programmable Current Limit High-Side Switch Preliminary Information
MIC2548-2YMM , Programmable Current Limit High-Side Switch Preliminary Information
MIC2549A-1BTS , Programmable Current Limit High-Side Switch
MCR100-3-MCR100-4-MCR100-6-MCR100-8
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
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Reverse Blocking Triode ThyristorsPNPN devices designed for high volume, line-powered consumer applications such
as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and
sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package
which is readily adaptable for use in automatic insertion equipment. Sensitive Gate Trigger Current — 200 μA Maximum Low Reverse and Forward Blocking Current — 100 μA Maximum, TC = 125°C Low Holding Current — 5 mA Maximum Glass-Passivated Surface for Reliability and Uniformity
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
