MC74VHC373MEL ,Octal D-Type Latch with 3-State OutputELECTRICAL CHARACTERISTICS (Input t = t = 3.0ns)r fT = 25°C T = − 40 to 85°CA AMin Typ Max Min MaxS ..
MC74VHC374DTR2 ,Octal D-Type Flip-Flop with 3-StateELECTRICAL CHARACTERISTICS T = 25°C T = – 40 to 85°CÎÎA AV VCC CCÎÎÎÎV V Min Typ Max Min MaxSymbol ..
MC74VHC374DWR2 ,Octal D-Type Flip-Flop with 3-StateON SemiconductorMC74VHC374Octal D-Type Flip-Flopwith 3-State OutputThe MC74VHC374 is an advanced h ..
MC74VHC374DWR2 ,Octal D-Type Flip-Flop with 3-StateMAXIMUM RATINGS*ÎÎÎÎÎÎ Symbol ParameterÎÎÎÎÎ ValueÎÎÎ UnitThis device contains protectioncircuitry ..
MC74VHC374DWR2 ,Octal D-Type Flip-Flop with 3-StateELECTRICAL CHARACTERISTICSÎÎÎÎÎT = 25°C T = – 40 to 85°CA AÎÎV VCC CCV Min Typ Max Min MaxSymbol Pa ..
MC74VHC374M ,Octal D-Type Flip-Flop with 3-State OutputMAXIMUM RATINGS*Symbol Parameter Value UnitThis device contains protectionÎÎÎcircuitry to guard aga ..
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MC74VHC373MEL
Octal D-Type Latch with 3-State Output
MC74VHC373
Octal D-Type Latch
with 3-State Output
The MC74VHC373 is an advanced high speed CMOS octal latch
with 3−state output fabricated with silicon gate CMOS technology. It
achieves high speed operation similar to equivalent Bipolar Schottky
TTL while maintaining CMOS low power dissipation.
This 8−bit D−type latch is controlled by a latch enable input and an
output enable input. When the output enable input is high, the eight
outputs are in a high impedance state.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
Features High Speed: tPD = 5.0 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 4.0 �A (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2.0 V to 5.5 V Operating Range Low Noise: VOLP = 0.9 V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300 mA ESD Performance: HBM > 2000 V; Machine Model > 200 V Chip Complexity: 186 FETs or 46.5 Equivalent Gates Pb−Free Packages are Available*
*For additional information on our Pb−Free strategy and soldering details, please
MARKING
DIAGRAMS
SOIC−20 WIDE
DW SUFFIX
CASE 751D
SOEIAJ−20
M SUFFIX
CASE 967
TSSOP−20
DT SUFFIX
CASE 948E
PIN ASSIGNMENTGND
VCC
http://See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week