MC74VHC08DTR2 ,Quad 2-Input GateELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)ÎÎÎÎÎr fT = 25°C T = − 40 to 85°CÎ A AMin Typ Max ..
MC74VHC08DTR2G , Quad 2−Input AND Gate
MC74VHC08M ,Quad 2-Input AND Gate**SEMICONDUCTOR TECHNICAL DATA* * *The MC74VHC08 is an advanced high speed CMOS 2–input AND gatefa ..
MC74VHC08MEL ,Quad 2-Input GateMAXIMUM RATINGSÎÎÎÎÎÎ Symbol ParameterÎÎÎÎÎÎ ValueÎÎ UnitThis device contains protectioncircuitry t ..
MC74VHC125 ,Quad Bus Buffer with 3-State InputsMAXIMUM RATINGS*ÎÎÎÎÎÎ Symbol ParameterÎÎÎÎÎÎ ValueÎÎ UnitThis device contains protectioncircuitry ..
MC74VHC125DR2 ,Quad Bus Buffer with 3-State InputsELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)r f T = ≤ÎÎAT = 25°C T = ≤ 85°C 125°CA AÎÎÎÎSymbol ..
MDP1603-101G ,Thick Film Resistor Networks, Dual-In-Line, Molded DIP, 01, 03, 05 SchematicsELECTRICAL SPECIFICATIONSMODEL/ SCHEMATIC RESISTOR RESISTANCE STANDARD TEMPERATURE TCR WEIGHTNO. OF ..
MDP1645 ,Dual Inline Package, Molded DIP, Rugged, Molded Case Construction, Highly Stable, Automatic Insert Compatible, Available in Tube Pack, Reduces Assembly Costs For Technical Questions, contact: ff2aresistors Document Number: 3151244 Revision 25-Oct-00MDP 164 ..
MDS213CG , 12-Port 10/100Mbps 1Gbps Ethernet Switch
MDS35-800 ,DIODE / SCR MODULEapplications,ISOTOP®using phase controlled bridges, such as soft-startcircuits, welding equipment, ..
MDS50-1200 ,DIODE / SCR MODULEFEATURES:Symbol Value UnitI50-70-85 AT(RMS)V /V800 and 1200 VDRM RRMI 50 and 100 mAGTDESCRIPTIONPac ..
MDS50-800 ,DIODE / SCR MODULEMDS35/50 /80SeriesDIODE / SCR MODULEMAIN
MC74VHC08-MC74VHC08DTR2-MC74VHC08MEL
Quad 2-Input Gate
MC74VHC08
Quad 2-Input AND Gate
The MC74VHC08 is an advanced high speed CMOS 2−input AND
gate fabricated with silicon gate CMOS technology. It achieves high
speed operation similar to equivalent Bipolar Schottky TTL while
maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems. High Speed: tPD = 4.3 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 2.0 �A (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2.0 V to 5.5 V Operating Range Low Noise: VOLP = 0.8 V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300 mA ESD Performance: Human Body Model > 2000 V;
Machine Model > 200 V Chip Complexity: 24 FETs or 6 Equivalent Gates Pb−Free Packages are Available
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOIC−14
D SUFFIX
CASE 751A
TSSOP
DT SUFFIX
CASE 948G
SOEIAJ−14
M SUFFIX
CASE 965
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xxxx = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week
MARKING
DIAGRAMSSee detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
