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High Speed Dual MOSFET Driver
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Prepared by: Wayne Chavez
Discrete Applications Engineering
INTRODUCTIONIn low voltage motor drives, it is common practice to use
complementary MOSFET half-bridges to simplify the gate
drive design. However, the P-channel FET within the
half-bridge usually has a higher on resistance or is larger
and more expensive than the N-channel FET. The alternative
solution is to design in an N-channel half-bridge. The
N-channel half-bridge uses silicon more efficiently, while
minimizing conduction losses and power device expense.
The tradeoff to take advantge of N-channel devices is found
in increased gate drive design complexity. Minimizing the
gate drive complexity in a brushed DC motor drive with an
all N-channel H-bridge is the focus of this note. In addition,
design considerations, diode snap and shoot-through current
are discussed and circuit solutions are given.
The result of the design is evaluation board DEVB151
shown in Figure 1. DEVB151 features an MPM3017
N-channel, H-bridge and circuitry designed to interface
power devices within the MPM3017 to microprocessor
outputs. The board drives 24-volt to 48-volt motors and can
handle 8 amps of continuous motor current. A detailed
description of the evaluation board is presented within this
Application Note.
